Long-wavelength LED epitaxial wafer, chip and preparation method thereof

Abstract

The invention discloses a preparation method of a long-wavelength LED epitaxial wafer. The preparation step comprises a step of placing an epitaxial substrate into an epitaxial growth reaction chamber, and a step of growing a CaN epitaxial layer on the epitaxial substrate, growing a GaN buffer layer on the surface of the epitaxial substrate, growing an n-type Can on the GaN buffer layer, growing aquantum well on the n-type CaN, and growing a p-type CaN on the quantum well, wherein the thickness of the CaN epitaxial barrier is h, the thickness is controlled to be larger than or equal to 0.35 micrometers and smaller than or equal to 6 micrometer. The electrical performance of an LED prepared by a gallium-nitride-based long-wavelength LED epitaxial wafer prepared by the invention is consistent with the electrical performance of a blue-green CaN-based LED.

Description

technical field [0001] The invention relates to an LED epitaxial barrier wafer. More specifically, the present invention relates to a long-wavelength LED epitaxial barrier wafer, chip and preparation method thereof. Background technique [0002] In the prior art, gallium arsenide diodes emit red light, gallium phosphide diodes emit green light, silicon carbide diodes emit yellow light, and gallium nitride diodes emit blue light. Gallium nitride is a wide bandgap compound semiconductor material, which has the characteristics of blue light emission, high temperature, high frequency, high voltage, high power, acid resistance, alkali resistance, corrosion resistance, etc. It is the most important semiconductor after germanium, silicon and gallium arsenide As one of the materials, it occupies an important position in the field of blue light and ultraviolet optoelectronics technology, and it is also an ideal material for making high-temperature and high-power semiconductor devi...

AI Technical Summary

Problems solved by technology

However, the gallium nitride used in the prior art cannot directly emit red light. In order to emit white light, it is necessary to excite blue light or green light through a specific phosphor, so that it emits white light after excitation, so as to be used in the field of daily lighting. , but because phosphors are toxic and harmful, environmental pollution and other factors, they have received a lot of environmental protection attention in recent years, so major companies have begun to avoid the use of phosphors, and everyone is doing their best to study the use of healthy and safe alternatives

In fact, in addition to this, in order to obtain white light, it can also be prepared by mixing blue light, green light, and red light in theory. However, in the prior art, red light is mainly prepared from gallium arsenide. Performance, such as light decay period, service life, etc., especially the photoelectric performance can not be compared with the blue and green light prepared by gallium nitride, so in the process of white light preparation and daily lighting applications, everyone has given up using arsenide Gallium

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