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Method and device for producing a semiconductor layer

A semiconductor and mold release layer technology, applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, crystal growth, etc., can solve the problems of material loss and high manufacturing cost

Pending Publication Date: 2018-07-31
NEXWAFE GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But manufacturing costs are high, also due to material loss when sawing silicon blocks

Method used

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  • Method and device for producing a semiconductor layer
  • Method and device for producing a semiconductor layer
  • Method and device for producing a semiconductor layer

Examples

Experimental program
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Embodiment Construction

[0091] All drawings are schematics that are not to scale. In the drawings, the same reference numerals indicate the same or the same elements. in Figure 1 to 3 Among them, the processing surface of the carrier substrate 1 is always on the upper side.

[0092] figure 1 A method for manufacturing a semiconductor layer according to the prior art is shown.

[0093] A porous release layer 2 has been formed on the carrier substrate 1. Then, in figure 1 The semiconductor layer 3 is deposited epitaxially on the upper processing surface. The semiconductor layer covers the entire processing surface, that is, covers both the area with the release layer and the edge area without the release layer. In addition, due to parasitic deposition, the semiconductor layer 3 at least partially overlaps the edge sides (5a and 5b) of the carrier substrate, such as figure 1 As shown in. Then, the separation cut 4 is realized by laser radiation, which at least completely penetrates the semiconductor la...

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Abstract

The invention relates to a method for producing a semiconductor layer (3), comprising the following method steps: A, creating a release layer (2) on a carrier substrate (1); B, applying a semiconductor layer (3) to the release layer (2); C, detaching the semiconductor layer (3) from the carrier substrate. The invention is characterized in that, in method step A, the release layer (2) is created soas to fully cover at least a processing side of the carrier substrate, in that, in method step B, the semiconductor layer (3) is applied so as to fully cover the release layer (2) at least on the processing side and partially overlap one or more peripheral sides (5a, 5b) of the carrier substrate and in that, between method steps B and C, in a method step C0, regions of the semiconductor layer (3)that overlap a peripheral side are removed. The invention also relates to a semiconductor wafer, to a device for edge correction, to a detaching unit and to a device for producing a semiconductor layer.

Description

Technical field [0001] The present invention relates to a method and apparatus for manufacturing a semiconductor layer. Background technique [0002] For large-area electronic devices, such as large-area light-emitting elements or photovoltaic solar cells, there is a demand for high-quality, economical semiconductor wafers, because in such devices, the material cost of semiconductor wafers accounts for the entire product The main part of the cost. In order to manufacture semiconductor wafers, there is known a method of manufacturing semiconductor wafers from silicon blocks ("ingots") by sawing. As a result, high-quality, especially single-crystal semiconductor wafers can be manufactured. However, the manufacturing cost is high, and the reason is also the material loss that occurs when the silicon block is sawed. [0003] Therefore, an alternative method has been developed in which a semiconductor layer is deposited on a carrier substrate and then the semiconductor layer is separ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/06
CPCC30B33/06C30B25/18C30B29/06C30B33/02H01L21/02381H01L21/02532H01L21/6835
Inventor S·瑞伯K·席林格F·吉伯克
Owner NEXWAFE GMBH