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A circuit-level single event effect simulation platform

A simulation platform and circuit technology, applied in design optimization/simulation, CAD circuit design, electrical digital data processing, etc., can solve problems such as the fault current source simulation platform that has not yet been seen, and achieve the effect of fast simulation speed and low cost

Active Publication Date: 2021-05-11
陕西欣微绘通科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, there is no simulation platform that can simultaneously inject multiple fault current sources for large-scale circuits

Method used

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  • A circuit-level single event effect simulation platform
  • A circuit-level single event effect simulation platform
  • A circuit-level single event effect simulation platform

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0037] Each module of the circuit-level single event effect simulation platform of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0038] Such as figure 1 , figure 2 As shown, the circuit-level single event effect simulation platform includes a circuit analysis module, a fault injection configuration module, an analysis mode module, a netlist processing module and a result analysis module.

[0039] The circuit analysis module obtains the ratio of the node list file of the analyzed circuit to the drain region in the layout. Specifically: the circuit analysis module uses Perl script and C-shell script to extract all nodes in the circuit according to the netlist file of the circuit, and stores all nodes in a circuit node list file. For different circuit forms, such as SRAM circuit and CPU circuit, the scripts for extracting circuit nodes will be different, but they will all form a circuit node list file, and each...

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Abstract

The invention provides a circuit-level single-event effect simulation platform, which can support large-scale circuits of more than ten thousand gates to carry out single-event effect simulation analysis. The circuit-level single event effect simulation platform includes a circuit analysis module, a fault injection configuration module, an analysis mode module, a netlist processing module, and a result analysis module. The circuit analysis module extracts all sensitive nodes in the circuit and generates a circuit node list file; The injection configuration module combines the circuit node list file and the relevant parameters of the fault current source to be injected into the circuit by the user, writes a script to randomly select the circuit node and fault injection time, and generates a fault injection file; the netlist processing module writes a script to obtain the result detection file, and then Combining the analysis mode and the fault injection file to generate a stimulus file and provide it to the Fast-Spice simulator; the result analysis module saves and extracts the simulation results, and forms different result icons according to different analysis modes.

Description

technical field [0001] The invention belongs to the field of space radiation effects, and relates to a single event effect simulation platform, which is especially suitable for relevant researchers to conduct single event effect simulation analysis on large-scale circuits of more than 10,000 gates. Background technique [0002] With the further development of aerospace industry and nuclear energy technology, both national defense modernization and national economic construction are in urgent need of electronic components with high reliability and high performance. Single event effect (SEE) refers to a radiation effect in which a single high-energy particle in the universe is injected into the sensitive area of ​​a semiconductor device, causing the logic state of the device to flip. This will lead to system dysfunction and, in severe cases, catastrophic accidents. With the improvement of process technology and the reduction of transistor size, the single event effect has bec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/367
CPCG06F30/20G06F30/30
Inventor 吴汉鹏李建波徐长卿刘毅杨银堂
Owner 陕西欣微绘通科技有限公司
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