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Preparation method of semiconductor chip protective layer and semiconductor chip

A semiconductor and protective layer technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of easy cracking and affect the moisture resistance of the device, to prevent moisture intrusion, improve Moisture resistance, effect of increasing thickness

Active Publication Date: 2021-01-12
河北中瓷电子科技股份有限公司石家庄高新区分公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides a method for preparing a semiconductor chip protective layer and a semiconductor chip to solve the problem in the prior art that the protective layer on the surface of the semiconductor chip is prone to cracks and affects the moisture resistance of the device.

Method used

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  • Preparation method of semiconductor chip protective layer and semiconductor chip
  • Preparation method of semiconductor chip protective layer and semiconductor chip
  • Preparation method of semiconductor chip protective layer and semiconductor chip

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Embodiment 1

[0040] Please refer to figure 1 (1), figure 1 Only a schematic view of the structure of a part of the semiconductor chip is shown. The semiconductor chip 100 includes a substrate 101 , pads 102 and a pattern area 103 . Wherein, the pressure point 102 is the power-on area of ​​the semiconductor device, which does not need to be covered by a protective layer, and the pattern area 103 is the preparation area of ​​the semiconductor device.

[0041] Please refer to figure 2 , a method for preparing a protective layer for a semiconductor chip, comprising:

[0042] Step S201, forming a first SiN layer on the upper surface of the first region of the semiconductor chip; wherein, the first region includes a region other than the pressure point, or the first region includes the region other than the pressure point and the edge area of ​​the pressure point.

[0043] In the embodiment of the present invention, please refer to figure 1 (2) Covering the first SiN layer 104 on the uppe...

Embodiment 2

[0060] Please refer to image 3 , image 3 It is a structural cross-sectional view of a part of a semiconductor chip. The semiconductor chip includes a semiconductor chip body, the upper surface of the first region of the semiconductor chip body is provided with a first SiN layer, the upper surface of the first SiN layer is provided with an organic polymer layer, and the upper surface of the organic polymer layer and The sidewalls are provided with a second SiN layer; wherein, the first SiN layer and the second SiN layer completely wrap the organic polymer layer; the first region includes a region outside the pressure point, or the The first region includes a region outside the pressure point and an edge region of the pressure point.

[0061] In an embodiment of the present invention, a semiconductor chip body includes a substrate 101 , pads 102 and a pattern area 103 . In one implementation manner, the protective layer covers the area outside the pressure point 102 , and i...

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Abstract

The present invention is suitable for the technical field of semiconductors, and provides a preparation method of a semiconductor chip protective layer and a semiconductor chip. The method comprises the steps of: forming a first SiN layer at an upper surface of a first area of a semiconductor chip, wherein the first area comprises an area except a pressure point, or the first area comprises an area except the pressure point and an edge area of the pressure point; forming an organic polymer layer at the upper surface of the first SiN layer; forming a second SiN layer at the upper surface and the side wall of the organic polymer layer, wherein the first SiN layer and the second SiN layer completely wrap the organic polymer layer. The preparation method of the semiconductor chip protective layer and the semiconductor chip can significantly improve the moisture resisting performance of the semiconductor chip.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a protective layer of a semiconductor chip and a semiconductor chip. Background technique [0002] A semiconductor chip refers to a semiconductor device prepared by a semiconductor process on a semiconductor sheet. Semiconductor chips often face high temperature, high humidity, high pressure and other environments during use, which will greatly affect the stability and reliability of the device. For example, during the use of GaN field effect transistors, water vapor can penetrate the protective layer on the chip surface and enter the active area. Once the water molecules enter around the gate bars, it will cause corrosion, degrade device performance, and even burn the die directly. Therefore, in order to prevent moisture intrusion, ion contamination and other factors, a SiN dielectric layer with a certain thickness is usually deposited ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L23/00
CPCH01L21/02104H01L23/564
Inventor 付兴中王川宝廖龙忠吕树海张力江崔玉兴
Owner 河北中瓷电子科技股份有限公司石家庄高新区分公司