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Preparation method and prepared structure of two-color single-photon source structure

A single photon source, two-color technology, applied in the structure of the active region, nano optics, nanotechnology, etc., to achieve the effects of good controllability, adjustable wavelength, and simple preparation process

Active Publication Date: 2020-12-29
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the nanowire quantum dot quantum light source reported so far, the deterministic coupling between the self-organized quantum dot and the nanowire structure, and the expansion of the wavelength still need to be solved urgently.

Method used

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  • Preparation method and prepared structure of two-color single-photon source structure
  • Preparation method and prepared structure of two-color single-photon source structure
  • Preparation method and prepared structure of two-color single-photon source structure

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Embodiment 1

[0028] This embodiment provides a method for preparing a two-color single-photon source structure, figure 1 For the preparation flow diagram of the preparation method, combined with figure 2 , the preparation method provided by the invention comprises the following steps:

[0029] The first step is to grow and prepare the nanowire single quantum dot structure 2 on the semiconductor substrate 1 .

[0030] In this embodiment, the nanowire single quantum dot structure 2 can be prepared by way 1) or way 2):

[0031] 1) GaN / AlN or InAs / InP nanowire single quantum dot structure 2 grown by droplet autocatalysis; the quantum dot is located in the axial direction of the nanowire, and the substrate 1 is non-selective;

[0032] 2) Growth of InAs / GaAs, GaAs / AlGaAs or InAs / InP self-organized quantum dots, the density of self-organized quantum dots is less than 10 -8 / cm -2 , and then use the quantum dot fluorescence imaging method, and use electron beam exposure combined with inductiv...

Embodiment 2

[0040] This embodiment provides a two-color single-photon source structure, the process of its preparation is as follows figure 1 As shown, the prepared structure is as figure 2 , 3 shown.

[0041] Its preparation process is as follows:

[0042] S1. growing and preparing a nanowire single quantum dot structure 2 on a semiconductor substrate 1;

[0043] S2. Partially planarize the nanowire single quantum dot structure 2 to expose the stress island 3 at the top of the nanowire;

[0044] S3. Fabricate the two-dimensional film 4 by using a mechanical lift-off method, and transfer the two-dimensional film 4 to the stress island 3 to complete the preparation.

[0045] In the above scheme, the two-color single-photon source structure provided by the present invention can use the stress island 3 at the top of the nanowire to make the two-dimensional film 4 produce defect-emitting or localized high-brightness excitonic states 5, and then combine with its own single quantum dot Th...

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Abstract

The invention provides a preparation method of a two-color single photon source structure, which comprises the steps of: S1, growing and preparing a nanowire single quantum dot structure on a semiconductor substrate; S2, performing partial planarization on the nanowire single quantum dot structure to expose stress islands at the top end of nanowires; S3, and manufacturing a two-dimensional thin film by adopting a mechanical exfoliation method, and transferring the two-dimensional thin film onto the stress islands, and completing the preparation.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and devices, more specifically, to a preparation method and a prepared structure of a two-color single-photon source structure integrating nanowire quantum dots and two-dimensional material thin films. Background technique [0002] In recent years, quantum information technologies developed based on the principles of quantum mechanics, such as quantum computers, quantum key distribution, and quantum teleportation, have gradually shown great social and economic prospects. Among them, high-quality single-photon sources and entangled photon sources are the prerequisites for ensuring accurate encoding and efficient transmission and storage of information, and are an important basis for the practical application of quantum information technologies such as optical quantum computing and quantum secure communication in the future. [0003] Low-density quantum dots grown in the Stranski-Kra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00H01S5/34
Inventor 喻颖李彦吴泽儒陈晓添余思远
Owner SUN YAT SEN UNIV
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