Substrate table system and method for improving growth uniformity of diamond film by using same

Abstract

The invention relates to a substrate table system. The substrate table system comprises a substrate table, wherein water cooling pipes with different sizes are distributed below the substrate table indifferent areas. The method for improving the growth uniformity of a diamond film specifically comprises the following steps that the substrate table system is constructed; the diamond film is deposited, wherein in a cavity of a plasma ball generated by microwave discharge, the water cooling and heat dissipation efficiency of different areas of the substrate table is controlled, so that the substrate table has a high-to-low gradient heat dissipation effect from the center to the edge area, a uniform temperature distribution state is established on the surface of the substrate, and the purposeof improving the uniformity of the microwave plasma chemical vapor deposition diamond film is achieved; and a diamond film sample is taken out. The substrate table system has the beneficial effects of being easy to machine and mount, efficiently controlling the temperature of each area of the substrate table, effectively improving the uniformity of temperature distribution on the surface of the substrate table, and facilitating uniform deposition of the diamond film and the like.

Description

technical field [0001] The invention relates to the technical field of diamond film deposition, in particular to a substrate platform system and a method for improving the uniformity of diamond film growth by using the system. Background technique [0002] The excellent physical and chemical properties of diamond films have attracted widespread attention[ 1-3 ]. Nowadays, chemical vapor deposition (Chemical vapor deposition, CVD) technology is one of the main technologies for preparing diamond films. Among them, microwave CVD (Microwave plasma CVD, MPCVD) method has the advantages of electrodeless discharge, high energy conversion efficiency, and pure plasma. It is the primary method to prepare high-quality diamond films[ 4 ]. [0003] Over the years, one of the difficulties to be overcome in the preparation of diamond films by using MPCVD technology is how to improve the uniformity of diamond film deposition. A diamond film with high uniformity will not only reduce the ...

AI Technical Summary

Problems solved by technology

Nowadays, even though there are many cavity design schemes to meet the microwave feed-in of two microwave frequencies of 2.45GHz and 915MHz, the coupling power has also been greatly improved[ 8,9 ], but the growth uniformity of the diamond film still cannot meet the requirements of many high-tech fields[ 10 ], the main reason has an important relationship with the structural design of the substrate stage system

Most of the current designs based on the uniform distribution of substrate temperature use the difference in thermal conductivity of different metals to obtain a relatively uniform temperature distribution[ 4,10 ], but this kind of method will not only introduce too many metal impurities into the cavity, but also make it difficult to control the distribution of the substrate temperature in real time to meet the requirements of the preparation of thick diamond films.

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