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Substrate for semiconductor light emitting element and semiconductor light emitting element

A technology of light-emitting elements and semiconductors, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as the inability to obtain light output efficiency

Inactive Publication Date: 2018-08-10
OJI HLDG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, it is described that the improvement effect of the light emission efficiency can hardly be obtained in the uneven structure with a pitch of 1000 nm, whereas the uneven structure with a pitch of 500 nm can obtain an improvement of 170% compared with the case of a flat substrate. Light output efficiency

Method used

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  • Substrate for semiconductor light emitting element and semiconductor light emitting element
  • Substrate for semiconductor light emitting element and semiconductor light emitting element
  • Substrate for semiconductor light emitting element and semiconductor light emitting element

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no. 1 Embodiment approach

[0109]

[0110] use figure 1 , 2 The substrate 11 for a semiconductor light emitting element according to one embodiment of the present invention will be described. Such as figure 1 As shown, the substrate 11 for a semiconductor light emitting element has a concavo-convex structure on one surface of the substrate.

[0111] The concavo-convex structure of the substrate surface includes a plurality of convex portions c11 to cln. Moreover, flat surfaces f11-f1n are formed between each convex part.

[0112] figure 1 t11 to t1n in are the center points of the respective convex portions c11 to c1n. Based on the measurement results of AFM (Atomic Force Microscopy, Atomic Force Microscopy), a plurality of contour lines with a diameter of 20 nm are drawn for each convex part parallel to the reference plane, and the center of gravity of each contour line is determined (determined by the x-coordinate and y-coordinate point). The average position of each center of gravity (the...

no. 2 Embodiment approach

[0286] refer to Figure 6 to Figure 13 One embodiment of the semiconductor light emitting element substrate, the semiconductor light emitting element, the manufacturing method of the semiconductor light emitting element substrate, and the semiconductor light emitting element manufacturing method of the present embodiment will be described.

[0287] [Substrates for semiconductor light emitting devices]

[0288] Such as Figure 6 As shown, the substrate for a semiconductor light emitting element (hereinafter referred to as an element substrate 211B) includes a light emitting structure forming surface 211S as one side surface. In the manufacturing process of the semiconductor light emitting element, a light emitting structure is formed on the light emitting structure forming surface 211S.

[0289] As a material for forming the element substrate 211B, the material of the substrate described in the first embodiment can be used. The light emitting structure forming surface 211S i...

Embodiment 1

[0357]

[0358] On a sapphire substrate with a diameter of 2 inches and a thickness of 0.42 mm, SiO with a diameter of 3 μm is coated in a single layer by the single-layer coating method disclosed in Japanese Patent Application No. 2008-522506 2 Colloidal silica particles.

[0359] Specifically, prepare SiO with an average particle size of 3.02 μm 2 A 3.0% by mass aqueous dispersion (dispersion liquid) of spherical colloidal silica particles (coefficient of variation in particle size=0.85%) of colloidal silica particles.

[0360] Then, cetyltrimethylammonium bromide (surfactant) with a concentration of 50% by mass was added to the dispersion liquid so as to become 2.5 mmol / L, and stirred for 30 minutes to make cetyltrimethylammonium bromide Ammonium is adsorbed on the surface of colloidal silica particles. At this time, the dispersion liquid and cetyltrimethylammonium bromide were mixed so that the mass of cetyltrimethylammonium bromide became 0.04 times the mass of the co...

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Abstract

The invention relates to a substrate for a semiconductor light emitting element and the semiconductor light emitting element. This method for manufacturing the semiconductor light emitting element comprises: a particle arranging step, wherein a plurality of particles (M) are arranged in a single layer on a substrate (S); a particle etching step, wherein spaces are formed among the particles (M) bydry etching the arranged plurality of particles (M) under such conditions that the particles (M) are etched but the substrate (S) is not substantially etched; and a substrate etching step, wherein the substrate (S) is dry etched using the plurality of particles (M1) after the particle etching step as an etching mask, thereby forming a recessed and projected structure on one surface (X) of the substrate (S).

Description

[0001] Information about divisional applications [0002] This case is a divisional application. The parent case of this case is an invention patent application with an application date of August 21, 2013, an application number of 201380043898.4, and an invention title of "substrate for semiconductor light-emitting element, semiconductor light-emitting element, and their manufacturing method". technical field [0003] The present invention relates to a substrate for a semiconductor light emitting element, a semiconductor light emitting element, and a method for manufacturing the same. In particular, it relates to a substrate for a semiconductor light-emitting element suitable for a III-V nitride semiconductor light-emitting element, a semiconductor light-emitting element using the substrate obtained by the method, and a method for manufacturing the same. [0004] This case claims priority based on Japanese Patent Application No. 2012-182302 filed in Japan on August 21, 2012 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/50H01L21/02H01L33/00
CPCH01L21/3065H01L33/22H01L2933/0008H01L2933/0033H01L21/0237H01L21/0242H01L21/0243H01L21/02521H01L21/0254H01L21/0262H01L21/02658H01L21/3081H01L21/3086H01L33/007H01L33/20H01L21/02019H01L21/02282H01L21/02285H01L33/0066H01L33/50H01L2933/0025
Inventor 八田嘉久篠塚启大纮太郎梶田康仁
Owner OJI HLDG CORP
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