Laser calibrating method, machining method and device

Abstract

The invention relates to a laser calibrating method, machining method and device. The laser machining device comprises a worktable used for bearing a wafer assembly, a laser device and a recognition mechanism; when the laser machining device machines the wafer, the laser calibrating method is adopted to carry out first-time pre-calibrating, the worktable drives the wafer assembly to enter the cutting area from the calibrating area, the laser device cuts the front face of the wafer. The laser calibrating method mainly comprises the following steps that the laser device carries out ruling on thetransparent sticky film, and a test scratch is obtained; the worktable drives the wafer assembly to enter the calibrating area from the cutting area; the recognition mechanism obtains the image of the test scratch, and the deviation amount is determined; when the deviation amount is within the threshold value range, the worktable drives the wafer assembly to move, and the deviation amount is compensated for. Through the laser calibrating method, the machining position of the laser on the wafer assembly can be corrected, precise alignment of the laser and the wafer assembly can be achieved, and the machining yield of the wafer can be improved.

Description

Technical field [0001] The invention relates to the technical field of laser processing, in particular to a laser calibration method, processing method and device. Background technique [0002] In the process of making semiconductor wafers, laser processing is generally used to cut a number of die units on the wafer. The die units and die units are separated by perpendicularly interlaced cutting lanes. These cutting paths are the cutting paths of the laser. Since the processing accuracy of the wafer is relatively high, the cutting lane needs to be aligned before laser cutting, so that the laser focus is aligned with the center of the cutting lane. Generally, after the alignment is determined, the same type of wafer can be processed, but due to various factors such as the external environment, the laser focus may deviate from the center of the dicing lane, which reduces the yield of the wafer. Summary of the invention [0003] Based on this, it is necessary to provide a laser cal...

AI Technical Summary

Problems solved by technology

[0003] Based on this, it is necessary to provide a laser calibration method, processing method and device that can improve the yield rate of wafers for the problem that traditional laser processing methods will reduce the yield rate of wafers

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