Semiconductor device with interdigitated electrodes

Abstract

Disclosed is a semiconductor device having interdigitated electrodes, the semiconductor device including a drain, a source, and a plurality of interdigitated electrodes, each of the plurality of interdigitated electrodes has a Two interdigitated fingers of the source substrate, with at least one semiconductor conductive region between any two interdigitated electrodes in the plurality of interdigitated electrodes, wherein the interdigitated shape is an asymmetric shape and the fingertips of the interdigitated shape is a non-linear shape. Using the interdigitated electrode of the present invention can make the current or power evenly distributed on the entire chip surface, and the interdigitated electrode of the present invention has an electrode base with variable width, thereby realizing effective control of the flow distribution on the metal and good control chip scale.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a semiconductor device with interdigitated electrodes. Background technique [0002] In recent years, with the development of semiconductor technology, third-generation semiconductor materials such as GaN, AlGaN and other new materials have gradually attracted widespread attention. Due to their wide band gap and the ability to form a two-dimensional electron gas (2DEG) at the AlGaN / GaN heterojunction interface, these novel semiconductor materials have been widely used to fabricate high electron mobility transistors (HEMTs), extremely The conversion and conduction efficiency of the device is greatly improved. These devices are typically lateral devices, where current can flow close to the surface. [0003] In order to realize a variety of power electronic applications, semiconductor devices are generally required to be capable of current input of 1 to 100 amps. In lateral semic...

AI Technical Summary

Problems solved by technology

However, we will show that there are limitations to this design, such as the presence of high electric fields at the corners that cannot extend to other parts of the fingers

In addition, due to uneven current or electric field distribution, the existing electrode layout designs basically have potential defects of high on-resistance or low breakdown voltage.

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