Crystal growth device with melt stirring function

Abstract

The invention relates to a crystal growth device with a melt stirring function, crystal growth device comprises an induction coil (1), an insulation layer (2), an induction heating body (3), a raw material (4), a crucible (5) and a crucible pillar (6). The crucible (5) is provided with a stirrer (7) for stirring a raw material (4). Compared with the prior art, a crucible rotation function is addedon the conventional basis that the crucible and a melt are relatively static, the relative movement of the crucible and the melt is increased, bubbles in the melt can be more easily excluded, dopingelements in the raw material are more uniform in distribution, and the growth of high quality crystals is facilitated.

Description

technical field [0001] The invention belongs to the technical field of crystal material preparation, and relates to a crystal growth device with a melt stirring function which innovatively improves the thermal field of similar crystal growth processes such as crucible descent method and temperature gradient method. Background technique [0002] The crucible drop method and temperature gradient method have always been arsenide, fluoride, oxides (such as GaAs, CaF 2 , MgF 2 , BGO, BBO, Al 2 o 3 ) and other main growth methods of artificial crystals. It has the advantages of controllable and easy-to-adjust temperature gradient, high degree of automation, convenient manual operation, good thermal field repeatability, simple thermal field structure, and high production efficiency. It is a crystal growth process that is very suitable for industrialization and scale. But its process has the following disadvantages: [0003] 1. The crucible and raw materials are relatively stat...

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Problems solved by technology

[0003] 1. The crucible and raw materials are relatively static, and the gas is not easy to discharge after the melt in the crucible forms a steady flow, resulting in a large number of bubbles in the growing crystal;

[0004] 2. With the growth of larger crystals, the caliber of the crucible continues to increase, the radial temperature gradient in the same height plane inside the thermal field is too large, and the temperature distribution is uneven. When the crucible falls and the melt crystallizes, it is easy to induce polycrystalline nucleation to form grain boundaries , internal mosaic structure, growth stripes and other defects;

[0005] 3. When growing a doped crystal, the dopant ions are unevenly distributed inside the crystal

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