Insulated gate bipolar transistor device, fabrication method thereof and power electronic equipment
A technology of bipolar transistor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, circuit and other directions, can solve the problem of small size of insulated gate bipolar transistor device, increasing difficulty of manufacturing process, trench gate structure The problem of high integration level, to achieve the effect of suppressing the latch-up effect, increasing the area, and improving the quality
Inactive Publication Date: 2018-09-04
GREE ELECTRIC APPLIANCES INC
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Problems solved by technology
[0004] However, due to the high integration of the trench gate structure and the small volume of the IGBT device itself, the spacing between multiple trench gates is relatively dense, which increases the difficulty of the manufacturing process.
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[0054] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following examples are used to further describe the present invention in detail.
[0055] When referring to ordinal numbers such as "first", "second" or "third" herein, unless they really express the meaning of the order according to the context, it should be understood as only for the purpose of distinction.
[0056] like figure 1 and figure 2 As shown, in the related art, an insulated gate bipolar transistor device with a trench gate structure includes an N-type semiconductor substrate 02 , and a trench-gate structure is provided on one side of the N-type semiconductor substrate 02 and along a distance away from the N-type semiconductor substrate 02 . The P-type well 03, the N-type source region 04, the dielectric layer 05 and the metal layer 06 are arranged in sequence, wherein: the overall structure of the N-type semiconductor substrate 02, the P-type well 03 ...
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The invention relates to the technical field of power electronics, and discloses an insulated gate bipolar transistor device, a fabrication method thereof and power electronic equipment. By the insulated gate bipolar transistor device, the fabrication method thereof and the power electronic equipment, the area of a gate channel is expanded, the resistance of the gate channel is reduced, so that the fabrication difficulty of the insulated gate bipolar transistor device is reduced, and a latch-up effect of the insulated gate bipolar transistor device is improved. The insulated gate bipolar transistor device comprises an emitter structure and a gate structure, wherein the emitter structure is arranged at a region outside the gate structure, the gate structure comprises multiple gate groups which are arranged in parallel, each gate group comprises a plurality of groove gate units and a connection part, the plurality of groove gate units are arranged at intervals along a first direction, the connection part is used for connecting the plurality of groove gate units, the length of the groove gate units perpendicular to the first direction is larger than the distance between two adjacent groove gate units, and the connection part is arranged at one side, near to the emitter structure, of each of the plurality of groove gate units.
Description
technical field [0001] The invention relates to the technical field of power electronics, in particular to an insulated gate bipolar transistor device, a manufacturing method thereof, and power electronic equipment. Background technique [0002] In the field of power electronics, Insulated Gate Bipolar Transistor (IGBT) is the most representative power device. The insulated gate bipolar transistor is a compound fully controlled voltage-driven semiconductor composed of a bipolar junction transistor (Bipolar Junction Transistor, BJT) and a metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOS). Power devices are very suitable for converter systems with DC voltages of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. [0003] An existing insulated gate bipolar transistor device with a trench gate structure mainly includes a plurality of tren...
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Login to View More IPC IPC(8): H01L29/739H01L29/423H01L21/331
CPCH01L29/4236H01L29/66348H01L29/7397
Inventor 武秦
Owner GREE ELECTRIC APPLIANCES INC