Array substrate, manufacturing method thereof, and display device

Abstract

Disclosed are an array substrate, a manufacturing method therefor, and a display device. The array substrate comprises a base substrate; a multi-film layer structure, provided on the base substrate, the multi-film layer structure at least comprising an interlayer insulating layer, and the interlayer insulating layer being provided thereon with a hole, used for releasing stress between film layers; and a touch signal line layer, provided on the multi-film layer structure. By such means, the present application implements the effective release of stress between the film layers on the array substrate, and prevents the problem in which film layers covering a plastic frame breaking during a splitting process.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] For an in-cell touch panel with high pixel density (PPI, Pixels Per Inch), its touch TP trace is generally designed with an independent layer to realize the transmission of TP signals. With the development of panel design towards ultra-narrow bezels, there are higher requirements for frame glue width and cell cutting technology. [0003] In the manufacturing process of the array substrate, "tensile stress" or "tensile stress" exists in different film deposition methods. Taking the insulating layer as an example, silicon nitride (SiNx) or silicon oxide (SiOx) is generally used. Among them, nitrogen The silicon oxide film layer generally exhibits "tensile stress", and the silicon oxide film layer generally exhibits "tensile stress", and the matching between the non-fi...

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Problems solved by technology

[0003] In the manufacturing process of the array substrate, there is "tensile stress" or "tensile stress" in different film deposition methods. Taking the insulating layer as an example, silicon nitride (SiNx) or silicon oxide (SiOx) is generally used. Among them, nitrogen The silicon oxide film layer generally exhibits "tensile stress", and the silicon oxide film layer generally exhibits "tensile stress", and the matching between the non-stick film layers may easily lead to the uneven stress of the film layer inside the array substrate

[0004] Due to the uneven stress of the inner film layer of the array substrate, the stress unevenness of the film layer of the array substrate is likely to be aggravated during the curing process of the sealant in the box-forming process

And for the narrow frame cutting (cut on seal) technology, its slitting process is easy to cause the film layer to break at the frame rubber cover

The breakage of the film layer on the edge of the side frame glue of the panel terminal will easily lead to the breakage of the touch wiring, resulting in the failure of the touch function

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