Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cathode vacuum arc plasma magnetic filter device and application thereof

A cathode vacuum arc and plasma technology, which is applied in the directions of filtration and separation, ion implantation plating, vacuum evaporation plating, etc., to achieve the effect of improving uniformity and high movement speed

Active Publication Date: 2018-09-18
BEIJING NORMAL UNIVERSITY
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve the problems described above

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cathode vacuum arc plasma magnetic filter device and application thereof
  • Cathode vacuum arc plasma magnetic filter device and application thereof
  • Cathode vacuum arc plasma magnetic filter device and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0055] The structure of the cathode vacuum arc plasma magnetic filter device according to one embodiment of the present invention is listed below.

[0056] The cathode vacuum arc plasma magnetic filter device includes an arc head 1, an anode cylinder 2 and a magnetic filter elbow 3; the arc head 1 is connected to the first end of the anode cylinder 2, and the second end of the anode cylinder 2 is connected to the magnetic filter elbow 3 connect. The connection method is flange connection.

[0057] The anode cylinder 2 is sequentially provided with a first strong pulse line package 201 and a suppression line package 202; the magnetic filter elbow 3 is a combination of a 90° elbow and a 45° elbow, and the magnetic filter elbow 3 is sequentially provided with a second strong pulse The pulse line package 301 , the middle line package 302 and the high pulse defocus line package 303 ; wherein, the number of the middle line package 302 is three groups. The winding direction of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a cathode vacuum arc plasma magnetic filter device which comprises an anode barrel (2). A first high-intensity pulse coil (201) and a suppression coil (202) are sequentially arranged on the anode barrel (2). According to the cathode vacuum arc plasma magnetic filter device, the arc spot motion speed is high, and large particle spraying caused by local temperature increase can be obviously reduced; the deposition rate is 1-3 times the deposition speed under the existing technical conditions; Gaussian distribution of the traditional magnetic filter technology becomes intouniform distribution within the beam spot diameter range, the thickness difference is smaller than 10%, and uniformity of a film layer can be greatly improved; and under magnetic field cooperation, when the size of a source target is 100 mm, beam spots of plasma can achieve film coating of workpieces with the sizes being 300 mm or above.

Description

technical field [0001] The invention belongs to the field of cathode vacuum arc magnetic filtration, and in particular relates to a cathode vacuum arc plasma magnetic filtration device and its application. Background technique [0002] With the rapid development of science and technology, the requirements for material surface modification technology are getting higher and higher, and the traditional single surface modification technology has become increasingly difficult to meet the technical requirements of industrial production; synthesis, integration and multi-function become the trend of technological development. [0003] In recent years, some surface modification composite technologies have come out and been put into the industry one after another, and play an important role. For example, the composite technology of magnetron sputtering technology and arc ion plating technology is compatible with the advantages of magnetron sputtering technology that can deposit large...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32B01D35/06
Inventor 廖斌欧阳晓平张丰收张旭吴先映
Owner BEIJING NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com