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a bifeo 3 Film and method of making the same

A thin film, tetragonal phase technology, applied in the field of BiFeO3 thin film and its preparation, can solve the problems of large damage and uneven structure of the thin film

Active Publication Date: 2022-01-04
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method of preparing thin films with different substrates can only grow different phases of BiFeO when preparing 3 film, and the method of etching with focused ion beam is to use BiFeO 3 The film is etched into a nano-island structure, but the structure etched by this etching method is not uniform. For BiFeO 3 Membrane damage is also great

Method used

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  • a bifeo <sub>3</sub> Film and method of making the same
  • a bifeo <sub>3</sub> Film and method of making the same
  • a bifeo <sub>3</sub> Film and method of making the same

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Effect test

Embodiment 1

[0028] Embodiment 1, preparation BiFeO 3 film 1

[0029] 1) In the pulsed laser deposition system, the pulsed laser energy is set to 300mJ, the frequency is 8Hz, the oxygen pressure is 15Pa, and the growth temperature is 700°C. 3 A layer of Ce with a thickness of 10 nm was epitaxially grown on the substrate x Ca 1-x MnO 3 (x=0.04) as the bottom electrode layer. Then epitaxially grow a layer of BiFeO with a thickness of 50nm on the bottom electrode layer 3 layer.

[0030] 2) Use alcohol to dilute polystyrene beads with a diameter of 1000nm, and then disperse them on the surface of deionized water to form monolayer polystyrene beads, and finally transfer the monolayer polystyrene beads to the BiFeO obtained in step 1). 3 layer.

[0031] 3) Using oxygen plasma to split the single-layer polystyrene pellets, the splitting time is 30 min.

[0032] 4) Set the cathode current to 15A, the anode voltage to 50V, the screen voltage to 300V, the ion acceleration voltage to 250V, th...

Embodiment 2

[0034] Embodiment two, preparation BiFeO 3 film 2

[0035] 1) In the pulsed laser deposition system, the pulsed laser energy is set to 300mJ, the frequency is 8Hz, the oxygen pressure is 15Pa, and the growth temperature is 700°C. 3 A layer of Ce with a thickness of 10 nm was epitaxially grown on the substrate x Ca 1-x MnO 3 (x=0.04) as the bottom electrode layer. Then epitaxially grow a layer of BiFeO with a thickness of 50nm on the bottom electrode layer 3 layer.

[0036] 2) Use alcohol to dilute polystyrene beads with a diameter of 500 nm, and then disperse them on the surface of deionized water to form monolayer polystyrene beads, and finally transfer the monolayer polystyrene beads to the BiFeO obtained in step 1). 3 layer.

[0037] 3) Using oxygen plasma to split the single-layer polystyrene pellets, the splitting time is 30 min.

[0038] 4) Set the cathode current to 15A, the anode voltage to 50V, the screen voltage to 300V, the ion acceleration voltage to 250V, ...

Embodiment 3

[0040] Embodiment three, preparation BiFeO 3 film 3

[0041] 1) In the pulsed laser deposition system, the pulsed laser energy is set to 300mJ, the frequency is 8Hz, the oxygen pressure is 15Pa, and the growth temperature is 700°C. 3 A layer of Ce with a thickness of 10 nm was epitaxially grown on the substrate x Ca 1-x MnO 3 (x=0.04) as the bottom electrode layer. Then epitaxially grow a layer of BiFeO with a thickness of 50nm on the bottom electrode layer 3 layer.

[0042] 2) Use alcohol to dilute polystyrene beads with a diameter of 250 nm, and then disperse them on the surface of deionized water to form monolayer polystyrene beads, and finally transfer the monolayer polystyrene beads to the BiFeO obtained in step 1). 3 layer.

[0043] 3) Using oxygen plasma to split the single-layer polystyrene pellets, the splitting time is 10 min.

[0044] 4) Set the cathode current to 15A, the anode voltage to 50V, the screen voltage to 300V, the ion acceleration voltage to 250V...

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Abstract

The present invention provides a BiFeO 3 Thin film and preparation method thereof, the BiFeO 3 Thin films include BiFeO 3 Nanodots, the BiFeO 3 The nanodots include rhombic phase / tetragonal mixed phase and pure tetragonal phase, wherein the ratio of rhombic phase / tetragonal mixed phase is 50-80%. The BiFeO 3 The preparation method of the thin film comprises the following steps: (1) epitaxially growing a bottom electrode layer on a single crystal substrate, and then epitaxially growing a BiFeO on the bottom electrode layer 3 layer, finally in BiFeO 3 A single layer of polystyrene beads was placed on the surface of the layer; (2) the single layer polystyrene beads were separated by oxygen plasma; (3) BiFeO was etched using an argon ion beam 3 layer; (4) use chloroform to remove the single-layer polystyrene beads to obtain BiFeO 3 film. The present invention uses BiFeO 3 The layer is etched into nano-dots to induce phase transition. By using polystyrene beads of different diameters, nano-dots with different diameters can be obtained. By controlling the etching time of argon ion beam, different etching depths can be obtained, so as to achieve precise and controllable purpose without destroying the sample.

Description

technical field [0001] The invention belongs to the field of magnetoelectric multiferroic materials, in particular to a BiFeO 3 Thin films and methods for their preparation. Background technique [0002] Magnetoelectric multiferroic materials are multifunctional materials that can realize the coexistence and mutual coupling of electricity and magnetism. Under the action of an external magnetic field, the magnetoelectric multiferroic material can achieve electric polarization response; under the action of an external electric field, the magnetoelectric multiferroic material can achieve magnetic spin ordering. Therefore, magnetoelectric multiferroic materials can often derive rich and colorful quantum phenomena. The unique properties of magnetoelectric multiferroic materials make them have great application potential in the development and design of new quantum information functional devices in the future. [0003] Among many magnetoelectric multiferroic materials, perovski...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/12B82Y30/00
CPCB82Y30/00H10N50/85H10N50/01
Inventor 陈德杨孙菲田国陈超邓雄高兴森
Owner SOUTH CHINA NORMAL UNIVERSITY