Crystal edge offset detection method, system, and machine
A technology of offset detection and crystal edge, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of ineffective detection of crystal edge offset, crystal edge offset, defects, etc. Achieve the effect of simple structure, no impact on production capacity, and increased cost
Active Publication Date: 2020-11-27
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
If the cleaning solution is sprayed offset, it will cause the crystal edge to shift, causing defects in the subsequent process
However, in the prior art, it is not possible to effectively detect the crystal edge deviation
Method used
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[0045] like figure 1 and figure 2 As shown, one side of the wafer 100 (generally the front side of the wafer, that is, the side with patterns) has a pattern area 110 and a crystal edge 120 outside the pattern area 110, wherein the thickness of the pattern area 110 is greater than the crystal edge 120 thickness, there is a device pattern in the pattern area 110 , and identification information such as a wafer serial number (wafer ID) is marked on the edge 120 .
[0046]After the electrochemical coating (ECP) process, the newly plated film will cover the edge of the wafer, so the edge of the wafer needs to be cleaned to remove the film on the wafer, and cleaning solution is usually sprayed on the edge of the wafer. If the spraying of the cleaning solution deviates, it will cause the crystal edge to deviate and cause defects in the subsequent process. like figure 1 As shown, the center of the pattern area 110 coincides with the center O of the wafer 100, and the crystal edge ...
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The invention discloses a wafer edge offset detection method and system and a machine. The wafer edge offset detection method is used for detecting whether a wafer edge on one side of a wafer has an offset or not, and comprises the steps that light is emitted to one side of the wafer along at least one straight line, and reflected light of the wafer is received at the straight line, wherein the straight line is parallel to the wafer, and the straight line crosses part of a pattern area; the intensity of the reflected light is calculated, and then the intensity of the reflected light at the straight line is judged; if intensity intervals of the reflected light at the straight line are sequentially a first intensity interval, a second intensity interval and a third intensity interval and theintensity in the first intensity interval and the intensity in the third intensity interval are less than the intensity in the second intensity interval, the width of the first intensity interval andthe width of the third intensity interval are calculated; whether the width of the first intensity interval is equal to the width of the third intensity interval or not is judged, and if so, the wafer edge of the wafer does not have an offset; otherwise, the wafer edge of the wafer has an offset.
Description
technical field [0001] The invention relates to the technical field of detection of semiconductor manufacturing processes, in particular to a crystal edge deviation detection method, system and machine. Background technique [0002] The manufacturing of the semiconductor industry is changing with each passing day, and the line width of products is constantly decreasing. With the reduction of line width, defects will cause greater damage to product yield, and improving various factors that cause defects has become an important means to improve semiconductor yield. During production, many defects are found to be related to the quality of the wafer edge. Good edge quality can effectively reduce the source of defects, thereby providing a good guarantee for improving chip quality. [0003] For example, after the electrochemical coating (ECP) process, the newly plated film will cover the edge of the crystal, so the edge of the wafer needs to be cleaned to remove the film on the c...
Claims
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IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 汪红英孙强陈思安
Owner SEMICON MFG INT (SHANGHAI) CORP