Bandgap reference voltage circuit with ultra-low power consumption under full-CMOS subthreshold work

An ultra-low power consumption, reference voltage technology, applied in the direction of regulating electrical variables, control/regulating systems, instruments, etc., can solve problems such as unusability, poor temperature coefficient, etc., to achieve lower operating current, high temperature accuracy, and low power consumption Effect

Pending Publication Date: 2018-09-28
JIANGSU COLLEGE OF INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the need of positive and negative temperature coefficient weighting, the output voltage of traditional bandgap reference can only be fixed at about 1.2V, otherwise its temperature coefficient will be very poor
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Method used

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  • Bandgap reference voltage circuit with ultra-low power consumption under full-CMOS subthreshold work
  • Bandgap reference voltage circuit with ultra-low power consumption under full-CMOS subthreshold work
  • Bandgap reference voltage circuit with ultra-low power consumption under full-CMOS subthreshold work

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Embodiment Construction

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0024] Such as figure 1 As shown, the bandgap reference voltage circuit of a kind of ultra-low power consumption full CMOS subthreshold work proposed by the present invention comprises a start-up circuit 1, a subthreshold current generating circuit 2, a voltage dividing CTAT (Complementary Proportional To AbsoluteTemperature) circuit 3, a cascaded PTAT (Proportional To Absolute Temperature) circuit 4 and PTAT voltage regulator tube 5 .

[0025] The output end of the start-up circuit 1 is connected to the input end of the subthreshold current generation circuit 2, and the output end of the subthreshold current generation circuit 2 is respectively connected to the input end of the voltage dividing CTAT circuit 3, the input end of the cascaded PTAT circuit 4, and the PTAT voltage adjustment tube At the input end of 5, the positive temperature c...

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Abstract

The invention relates to a bandgap reference voltage circuit with ultra-low power consumption under full-CMOS subthreshold work. The circuit comprises a starting circuit, a subthreshold current generation circuit, a voltage division CTAT circuit, a cascading PTAT circuit and a PTAT voltage adjustment tube. Through the starting circuit, all the circuits get rid of the null point and work at a normal work point; the subthreshold current generation circuit is used for generating subthreshold current of an MOS tube, and accordingly all the circuits work in a subthreshold state; the voltage division CTAT circuit is used for lowering the negative temperature coefficient of the circuit; the cascading PTAT circuit is used for generating PTAT voltage; the PTAT voltage can be adjusted through multi-grade segmentation, and the PTAT voltage adjustment tube 5 is used for adjusting current in the cascading PTAT circuit 4. Through the design of the full-CMOS subthreshold work, the whole working current is greatly lowered, finally the output voltage can be lower than 1 V, the temperature coefficient of the output voltage can be precisely adjusted, and accordingly the output voltage has high temperature precision.

Description

technical field [0001] The invention relates to a bandgap reference source circuit, in particular to a bandgap reference voltage circuit with ultra-low power consumption and full CMOS subthreshold operation, which can be widely used in low power consumption and high precision integrated circuit chips under deep submicron process conditions . Background technique [0002] Voltage reference is an important category of integrated circuits, and can also be used as a module in integrated circuits. The basic requirement for a voltage reference is that the output voltage varies as little as possible with changes in factors such as integrated circuit manufacturing process, temperature, power supply voltage, and driving load. [0003] The CMOS process has been called the mainstream process of integrated circuits due to its low static power consumption and its ability to be integrated on a large scale. In the commonly used CMOS process, the more types of components used, the greater...

Claims

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Application Information

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IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 刘锡锋孙萍胡佳莉
Owner JIANGSU COLLEGE OF INFORMATION TECH
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