High di/dt light-control thyristor packaging structure and packaging method

Abstract

The invention relates to the semiconductor technology, and specifically relates to a packaging structure and a packaging method applicable to a pulse power application light-control thyristor. The light-control thyristor packaging structure comprises a chip slot, a negative electrode metal shell integrated with the chip slot, four negative electrode pins fixed through an annular insulating layer,a metal cover plate used for device sealing, and a light trigger window formed in the middle part of the metal cover plate and having high light transmittance and adjustable area. The metal tube shellin the invention can be used as an independent positive electrode to be welded in the circuit in a patch form; the four-pin structure used in packaging can satisfy demand of modern pulse power application on the light-control thyristor current carrying capacity; compared with the conventional light-control thyristor packaging form, the light-control thyristor packaging structure disclosed in theinvention has larger light trigger window, high heat dissipation capability, small size and adjustable area; and in addition, the outer tube shell prepared from metal is relatively small in dimensions, so that large chip small packaging form of a high-power device can be realized.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a packaging structure and packaging method suitable for pulse power application photo-controlled thyristors. Background technique [0002] Power semiconductor devices mainly refer to high-power electronic devices used in power conversion and control circuits of power equipment. Usually, the current is tens to thousands of amps, and the voltage reaches hundreds of volts. Currently commonly used power semiconductor devices include thyristors, GTOs, MOSFETs, IGBTs, etc. The package pins of these power devices need to withstand high withstand voltage or high current. Therefore, power device packages equipped with such high-power semiconductor chips need to have high resistance High voltage and strong heat dissipation capability; for devices with pulse power applications, the high voltage and high current have higher requirements for heat dissipation, and for pulse power devices with high c...

AI Technical Summary

Problems solved by technology

[0003] Furthermore, most of the packages of light-controlled thyristors for pulse power applications are ceramic packages, such as figure 2 As shown, in theory, it can meet the packaging requirements commonly used for pulse power devices. However, with the improvement of di / dt requirements for individual devices in the field of modern weapons and equipment, if the traditional ceramic packaging type is still used, it is very easy to cause damage to the device during pulse discharge. damage and cannot meet high di / dt requirements

Due to the limitations of the traditional ceramic packaging form itself, the light trigger window is only limited to the middle grating, and the open area of ​​the device is very limited when it is turned on, which cannot withstand a high current rise rate. This is why the traditional light-controlled thyristor cannot meet modern requirements. Application requirements for individual device current rise rates

[0004] Furthermore, the complexity of the layout design of existing power devices continues to increase, limited by the space of the carrier table and the position of the pins, and the optional lines for bonding are very small, especially for combined packaged devices, often limited by the carrier Space and tight space for wire bonding

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