Semiconductor device and manufacturing method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve the problems of reducing forward current density, low concentration, increasing on-resistance, etc., and achieve the effect of increasing current density and reducing area
Active Publication Date: 2021-09-24
HYUNDAI MOTOR CO LTD +1
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- Application Information
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Problems solved by technology
According to Poisson's equation, when a high breakdown voltage of a power semiconductor device is required, a low concentration and thick epitaxial layer or drift region is required, however, they are responsible for increasing the on-resistance and reducing the forward current density
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[0031] Reference will now be made in detail to various embodiments of the invention, examples of which are illustrated in the accompanying drawings and described below. While the invention will be described in conjunction with exemplary embodiments, it will be understood that present description is not intended to limit the invention to those exemplary embodiments. On the contrary, the invention is intended to cover not only the exemplary embodiments, but also various alternatives, modifications, equivalents and other embodiments, which may be included within the spirit and scope of the invention as defined by the appended claims.
[0032] In addition, when a layer is referred to as being 'on' another layer or substrate, the layer can be directly formed on the other layer or substrate, or a third layer may be interposed therebetween.
[0033] figure 1 is a cross-sectional view schematically depicting one example of the semiconductor device according to the exemplary embodimen...
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The invention discloses a semiconductor device and a manufacturing method thereof. A semiconductor device may include: an n-type layer arranged sequentially at a first surface of an n+ type silicon carbide substrate; a p-type region arranged in the n-type layer; an auxiliary n+ type region arranged in the p-type region On or in the p-type region; n+-type region, arranged in the p-type region; auxiliary electrode, arranged on the auxiliary n+-type region and p-type region; gate electrode, separated from the auxiliary electrode and arranged on the n-type layer; source an electrode separated from the auxiliary electrode and the gate electrode; and a drain electrode arranged at the second surface of the n+ type silicon carbide substrate, wherein the auxiliary n+ type region is separated from the n+ type region and the source electrode is in contact with the n+ type region.
Description
[0001] Citations to related applications [0002] This application claims priority from Korean Patent Application No. 10-2016-0169810 filed on December 13, 2016, the entire contents of which are hereby incorporated by reference for all purposes. technical field [0003] The present invention relates to a semiconductor device including silicon carbide (SiC) and a method of manufacturing the same. Background technique [0004] Power semiconductor devices require low on-resistance or low saturation voltage to reduce power dissipation in the conducting state while allowing particularly large currents to flow. In addition, characteristics that can withstand a reverse high voltage of the PN junction applied to both ends of the power semiconductor device in an off state or the moment the switch is turned off, that is, high breakdown voltage characteristics are required. [0005] Among power semiconductor devices, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) digital c...
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IPC IPC(8): H01L29/40H01L29/78H01L21/336
CPCH01L29/404H01L29/66068H01L29/7827H01L29/7803H01L29/7828H01L29/7813H01L29/7802H01L29/1608H01L29/772H01L29/517H01L29/4236H01L21/0455H01L29/66015H01L29/66712
Inventor 周洛龙郑永均朴正熙李钟锡千大焕
Owner HYUNDAI MOTOR CO LTD