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Method of improving film thickness uniformity of atomic layer deposition and wafer boat for bearing wafers

A technology of atomic layer deposition and uniform film thickness, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., to achieve the effect of improving yield and film thickness uniformity

Pending Publication Date: 2018-10-09
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a method for improving the uniformity of atomic layer deposition film thickness, a method for manufacturing capacitors, a wafer boat for carrying wafers, and an atomic layer deposition furnace tube, so as to solve or alleviate one or more problems in the prior art more technical issues

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  • Method of improving film thickness uniformity of atomic layer deposition and wafer boat for bearing wafers
  • Method of improving film thickness uniformity of atomic layer deposition and wafer boat for bearing wafers
  • Method of improving film thickness uniformity of atomic layer deposition and wafer boat for bearing wafers

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Embodiment 1

[0092] Such as image 3 As shown, this embodiment provides an ALD furnace tube 20 for an ALD deposition method, including a boat 200 for carrying a wafer 10 , and a gas injector 21 and a gas outlet 22 arranged outside the boat 200 . The process gas ejected from the gas injector 21 is deposited on the wafer 10 via the wafer boat 200 to form a thin film, and the remaining process gas will be discharged from the ALD furnace tube 20 through the gas outlet 22 .

[0093] The wafer boat 200 includes a loading rack 210 , a top flow stabilizer 220 and a bottom flow stabilizer 230 , wherein the loading rack 210 includes a top cover 211 at the top, a base 212 at the bottom of the wafer boat 200 , and a plurality of connecting posts 213 .

[0094] Such as Figure 4 As shown, the outer circumference 212A of the base 212 has the same shape as the outer circumference 211A of the top cover 211. Preferably, the outer circumference 212A of the base 212, the outer circumference 211A of the top ...

Embodiment 2

[0115] Such as Figure 8 As shown, this embodiment provides an ALD furnace tube 30 for an ALD deposition method, including a boat 300 for carrying a wafer 10 , a gas injector 21 and a gas outlet 22 arranged outside the boat 300 . The difference from Embodiment 1 lies in the arrangement of the first groove, the second groove, the top stabilizer and the bottom stabilizer.

[0116] see Figure 8 , the loading frame 310 of the crystal boat 300 has a plurality of connecting columns 313, and the plurality of connecting columns 313 are vertically connected between the outer periphery 211A of the top cover 211 and the outer periphery 212A of the base 212, so that the top cover 211 and the base 212 are perpendicular to The connecting column 313 is provided.

[0117] A plurality of first grooves 313A are opened on the inner wall 313D of the connecting column 313, a plurality of second grooves 313B are opened on the inner wall 313D of the connecting column 313, and a plurality of third...

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Abstract

The invention provides a method of improving the film thickness uniformity of atomic layer deposition, a manufacturing method of a capacitor, a wafer boat for bearing wafers and an atomic layer deposition furnace tube. The method of improving the film thickness uniformity of atomic layer deposition comprises the steps that the wafer boat for bearing the wafers is provided, wherein a top flow stabilizing part is inserted into first grooves in a drawable mode so as to form resistance between a top cover and the wafers; a bottom flow stabilizing part is inserted into second grooves in a drawablemode so as to form resistance between a base and the wafers; the wafers are placed in a loading frame in a loading mode, wherein each wafer is inserted into the corresponding third groove in a drawable mode; and an atomic layer deposition technology is conducted, wherein processing gas is discharged into the wafer boat by a gas injector of the atomic layer deposition furnace tube and deposited tothe wafers through the wafer boat to form a film, and the top flow stabilizing part and the bottom flow stabilizing part improve the gas flow distribution uniformity of the processing gas on the top and the bottom of the wafer boat. By the adoption of the method of improving the film thickness uniformity of atomic layer deposition, the film thickness uniformity of atomic layer deposition can be improved, the tiny dust pollution can be reduced, and the yield can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a method for improving the uniformity of atomic layer deposition film thickness, a method for manufacturing a capacitor, a wafer boat for carrying wafers, and an atomic layer deposition furnace tube. Background technique [0002] Compared with the general low pressure chemical vapor deposition method (Low Pressure Chemical Vapor Deposition, referred to as LPCVD), the atomic layer deposition method (Atomic Layer Deposition, referred to as ALD) is to deposit substances layer by layer in the form of a single atomic film on the surface of the substrate. It is a self-limiting chemisorption reaction (self-limiting chemisorption), that is, no further deposition reaction after the deposition is saturated, and it will not be oversaturated and adsorbed due to too much special gas, so it has better step coverage and uniform film thickness degree, and can precisely ...

Claims

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Application Information

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IPC IPC(8): C23C16/458C23C16/455
CPCC23C16/45502C23C16/45544C23C16/4581
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC