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Wafer warping regulating structure and forming method thereof

A technology for adjusting structures and wafers, applied to electrical components, electrical solid devices, circuits, etc., can solve problems such as back film peeling off

Pending Publication Date: 2018-10-12
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, if the warpage state of the wafer needs to be adjusted to a large extent, a larger stress needs to be applied through the back film, so a back film with a larger thickness needs to be formed, but an increase in the thickness of the back film will lead to Increased risk of dorsal peeling
In the existing technology, it is also possible to adjust the degree of wafer warpage by ion implantation on the back of the wafer to generate stress, but usually after annealing, the stress generated by ion implantation will be released

Method used

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  • Wafer warping regulating structure and forming method thereof
  • Wafer warping regulating structure and forming method thereof
  • Wafer warping regulating structure and forming method thereof

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Embodiment Construction

[0026] The specific implementations of the wafer warpage adjustment structure and its forming method provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0027] Please refer to Figure 1 to Figure 6 , is a structural schematic diagram of the formation process of the wafer warpage adjustment structure according to a specific embodiment of the present invention.

[0028] Please refer to figure 1 , providing a wafer 100, the wafer has a front side 101 and a back side 102, and the front side 101 is used for forming semiconductor devices.

[0029] In this specific embodiment, the wafer 100 is a single crystal silicon wafer. In other specific implementation manners, the wafer 100 may also be a wafer of other semiconductor materials, such as silicon-on-insulator (SIO) and the like. Semiconductor devices, dielectric layers, etc. may also be formed on the front surface 101 of the wafer 100, figure 1 not shown in

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Abstract

The invention relates to a wafer warping regulating structure and a forming method thereof. The wafer warping regulating structure comprises a wafer,an etching structure and a stress layer with whichthe etching structure is filled,the wafer comprises a front face and a back face which are opposite,and the front face is used for forming a semiconductor device; the etching structure is located at the back face of the wafer,and the stress layer of the wafer warping structure is formed in the etching structure,so that the stress effect is improved,and the wafer warping state is regulated.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer warpage adjustment structure and a forming method thereof. Background technique [0002] During the semiconductor process, with the formation of various material layers and various semiconductor device structures on the surface of the wafer, various stresses will be generated on the surface of the wafer, causing the wafer to warp during the process. In the most ideal state, the wafer should not be warped. Even if it cannot be completely flat, in the ideal state, the warpage of the wafer should be that the edge is lifted towards the front of the wafer and about the central axis of the vertical wafer. Symmetrical bowl shape; in actual situations, due to the asymmetry of the stress on the front of the wafer, it often causes asymmetric warping of various forms of the wafer, which makes the wafer prone to fragmentation. [0003] In the prior art, a back film is usually...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L21/56
CPCH01L21/56H01L23/3171
Inventor 宋海王秉国刘松
Owner YANGTZE MEMORY TECH CO LTD