Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Distributed amplifier

A distributed amplifier, drain technology, applied in amplifiers, improving amplifiers to expand bandwidth, improving amplifier input/output impedance, etc., can solve problems such as poor gain flatness and amplifier instability, and achieve gain flatness improvement and solution. The effect of poor gain flatness

Pending Publication Date: 2018-10-16
GUANGDONG UNIV OF TECH
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a distributed amplifier, which solves the technical problem that the current distributed amplifier has poor gain flatness in the low frequency band and easily causes the amplifier to be unstable.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Distributed amplifier
  • Distributed amplifier
  • Distributed amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] The embodiment of the present invention provides a distributed amplifier, which solves the technical problem that the current distributed amplifier has poor gain flatness in the low frequency band and easily causes the amplifier to be unstable. .

[0050]In order to make the purpose, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the following The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0051] see Figure 1 to Figure 4 , the embodiment of the present invention provides...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a distributed amplifier. In the distributed amplifier disclosed by the invention, a drain low frequency terminal and a grid low frequency terminal are provided, wherein the drain low frequency terminal consists of a drain low frequency signal grounding path, and the grid low frequency terminal consists of a grid low frequency signal grounding path, so that low frequency signals are absorbed by the ground at the grid terminal prior to amplification; after amplification by a gain unit, the amplified low frequency signals are absorbed by the drain low frequency terminal according to the same principle, so that the gain flatness of a low frequency band of the distributed amplifier is obviously improved, and the technical problem that the gain flatness of the current distributed amplifier is poor in the low frequency band and easily causes the instability of the amplifier is solved.

Description

technical field [0001] The invention relates to the technical field of electronic devices, in particular to a distributed amplifier. Background technique [0002] The rapid development of wireless communication technology puts forward higher requirements on the data transmission rate and bandwidth of the communication system. Traditional broadband amplifier technologies include reactive / resistive network structure, parallel resistive feedback structure, feedback structure and distributed structure. [0003] Monolithic Microwave Integrated Circuit (MMIC) is a microwave circuit in which active devices and passive devices are fabricated on the same semiconductor substrate. [0004] In the distributed amplifier (Distributed Amplifier, DA), by combining the input and output capacitance of a certain number of transistors into the artificial transmission line structure, the problem faced by the input and output impedance of the broadband matching transistor is solved, with a simple...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/42H03F1/56
CPCH03F1/42H03F1/565
Inventor 刘雁鹏陈续威钟立平章国豪
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products