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Improved ion source cathode shield

A cathode shield and ion source technology, which is applied to solid cathodes, ion beam tubes, solid cathode components, etc., can solve problems such as shortening the service life of ion sources

Active Publication Date: 2018-10-23
AXCELIS TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This leak shortens the life of the ion source, necessitating shutting down the ion implanter to replace components

Method used

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  • Improved ion source cathode shield
  • Improved ion source cathode shield
  • Improved ion source cathode shield

Examples

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Embodiment Construction

[0028] The present invention generally relates to ion implantation systems and ion sources associated therewith. More specifically, the present disclosure relates to systems and apparatus for increasing the useful life and reducing maintenance costs and increasing productivity of ion sources for which an improved cathode shield is provided.

[0029] With this in mind, the present invention will now be elucidated with reference to the drawings, wherein like reference numerals may be used to refer to like elements throughout. It should be understood that the description of these aspects is for illustration only and is not to be construed for limiting purposes. In the following, for purposes of explanation, several specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without these specific details. In addition, the scope of the pre...

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Abstract

An ion source has an arc chamber having an arc chamber body. An electrode extends into an interior region of the arc chamber body, and a cathode shield has a body that is cylindrical having an axial hole. The axial hole is configured to pass the electrode therethrough. First and second ends of the body have respective first and second gas conductance limiters. The first gas conductance limiter extends from an outer diameter of the body and has a U-shaped lip. The second gas conductance limiter has a recess for a seal to protect the seal from corrosive gases and maintain an integrity of the seal. A gas source introduces a gas to the arc chamber body. A liner has an opening configured to pass the cathode shield therethrough, where the liner has a recess.

Description

[0001] References to related applications [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 280,567, entitled "IMPROVED ION SOURCE CATHODE SHIELD," filed January 19, 2016, the contents of which are incorporated herein by reference in their entirety. technical field [0003] The present invention relates generally to ion implantation systems, and more particularly to an improved ion source cathode shield for increasing the service life of boron nitride seals, thereby substantially preventing gas leakage from the ion source. Background technique [0004] In the manufacture of semiconductor devices, ion implantation is used to dope semiconductors with impurities. Ion implantation systems are often utilized to dope workpieces, such as semiconductor wafers, with ions from an ion beam during the manufacture of integrated circuits in order to create doping of n-type or p-type material or to form passivation layers. Such beam processing is commonl...

Claims

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Application Information

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IPC IPC(8): H01J27/02H01J27/08
CPCH01J27/022H01J37/08H01J37/3171H01J2237/006H01J2237/061H01J27/08H01J17/06H01J17/186
Inventor 尼尔·科尔文哲-简·谢保罗·西尔弗斯坦
Owner AXCELIS TECHNOLOGIES
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