Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photonic crystal all-optical diode

An all-optical diode and photonic crystal technology, applied in the field of optical switches, can solve the problems of difficult manufacture and complex structure, and achieve the effects of simple structure, reduced input light intensity, and widened wavelength range

Active Publication Date: 2018-11-06
SHANGHAI UNIV
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the 7th-order quasi-periodic structure provided by it can realize unidirectional transmission characteristics, but the structure has as many as 128 layers, the structure is complex and difficult to manufacture, and requires a large input light intensity of 10MW / cm 2

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photonic crystal all-optical diode
  • Photonic crystal all-optical diode
  • Photonic crystal all-optical diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The photonic crystal all-optical diode structure of this embodiment is as attached figure 1 As shown, the period numbers of alternating high and low refractive index media on the left and right sides of the nonlinear medium D are M=6, N=8, and L=2 respectively. Medium A chooses SiO 2 Material, Refractive Index n A = 1.45, thickness d A =267.24nm; medium B chooses Bi: YIG magneto-optical material, dielectric constant ε without external magnetic field 1 =4.88, thickness d B = 175.33 nm. The dielectric layer D is a nonlinear Kerr medium with a linear refractive index n 0 =2.35, thickness d D =659.57nm, the third-order nonlinear polarization coefficient χ=1.7607×10 -11 m 2 / V 2 . The center wavelength is 1550nm.

[0035] image 3 The incident light intensity is equal to 1.4820MW / cm 2 , the spectral response of the structure to normal and reverse incident light. It can be seen from the figure that this structure realizes excellent unidirectional transmission ch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a photonic crystal all-optical diode, which is formed by an asymmetrical one-dimensional photonic crystal containing a single-layer Kerr nonlinear medium. Two sides of the nonlinear medium are a regular film medium with periodic alternation and a magneto-optical medium sensitive to an external magnetic field. Based on the multivalued bistable state characteristics of a nonlinear spectral response and spatial asymmetry of the structure in the case of being larger than threshold light strength, photodiode characteristics of one-way transmission with positive incident high transmission and reverse incident cutoff can be realized. Through adjusting the size of the input light strength and / or the external magnetic field, flexible tuning of a wavelength range of an all-optical diode one-way transmission area can be realized. The all-optical diode has the protruding advantages of simple structure, easy realization, high transmission, large wavelength range, flexible tuning and the like.

Description

technical field [0001] The invention is a photonic crystal all-optical diode with flexible and adjustable characteristics, which is mainly used as an optical switch in an optical system. Background technique [0002] Since Yablonovitch and John first independently proposed the concept of photonic crystals in 1987, photonic crystals have attracted widespread attention because of their ability to control the propagation of photons. Its most important features are photonic bandgap and photonic localization. Among them, the one-dimensional photonic crystal is a dielectric structure periodically arranged in the one-dimensional space direction. It has the advantages of simple structure, excellent performance and easy integration. It is the most widely studied and practically used photonic crystal. In recent years, people have introduced photonic crystals into the field of optical communication, and designed many optical devices with excellent performance, such as photonic crystal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B6/122G02F1/095G02F1/35G02F1/365
CPCG02B6/1225G02B2006/1213G02B2006/12145G02F1/095G02F1/3501G02F1/365
Inventor 张娟王鹏翔
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com