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Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, electrical components, etc., can solve the problem of signal transmission speed reduction and achieve good characteristics

Active Publication Date: 2018-11-13
KOKUSAI DENKI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there are problems such as an increase in capacitance between wirings and a decrease in signal transmission speed.

Method used

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  • Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
  • Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
  • Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0030] Hereinafter, an embodiment of the present invention will be described.

[0031] use Figure 1 ~ Figure 6 , Describe a step of the manufacturing process of a semiconductor device. figure 1 Is a flowchart of the manufacturing process of a semiconductor device, Figure 2 ~ Figure 6 To show and figure 1 The state of the substrate corresponding to each process.

[0032] (Depression forming step S101)

[0033] The recess forming step S101 will be described.

[0034] Regarding the recess forming step S101, use figure 2 (A) and (B) are explained. The first recess 301 is formed on the surface of the surface layer 300 a of the substrate 300. The surface layer 300a is composed of either or both of the insulating film and the Si substrate. The insulating film is, for example, a silicon oxide film (SiOC film) containing carbon. The first recess 301 is formed by a patterning technique. Here, the height (depth) 301H of the recess is formed to be larger than the total film thickness (302...

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PUM

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Abstract

The present disclosure relates to a method of manufacturing a semiconductor device, a substrate processing apparatus and a recording medium. Described herein is a technique capable of providing a semiconductor device having good characteristics. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: loading a substrate forming awiring layer into a process chamber; and forming a stacked etch stopper film by performing: forming a first etch stopper film containing a first element and a second element by supplying a first element-containing gas and a second element-containing gas onto the substrate; and forming a second etch stopper film containing the first element, the second element and a third element by supplying the first element-containing gas, the second element-containing gas and a third element-containing gas onto the first etch stopper film.

Description

Technical field [0001] The present invention relates to a manufacturing method of a semiconductor device, a substrate processing apparatus and a recording medium. Background technique [0002] In recent years, the degree of integration of semiconductor devices has gradually increased. Along with this, the wiring room has been miniaturized. Therefore, there are problems such as an increase in capacitance between wirings and a decrease in signal transmission speed. Therefore, it is necessary to reduce the dielectric constant between wirings as much as possible. [0003] As a method of reducing the dielectric constant, an air gap structure in which gaps are provided between wirings has been studied. As a method of forming voids in the air gap structure, for example, there is a method of etching between wirings. Summary of the invention [0004] The problem to be solved by the invention [0005] As the width of the wiring and the width between the wirings are reduced, the wiring may ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02518H01L21/0262H01L21/02656H01L23/5222H01L23/53295H01L21/76816H01L21/76832H01L21/02167H01L21/02211H01L21/02274H01L21/0228C23C16/325C23C16/45525H01L21/7682H01L21/76829H01L21/7685H01L21/67017H01L21/76885
Inventor 竹田刚大桥直史菊池俊之
Owner KOKUSAI DENKI KK
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