Die bond process structure, die bonder and die bond control method

Abstract

The invention discloses a die bond process structure, a die bonder and a die bond control method. The die bond process structure comprises a die bond arm control mechanism, a lead frame fixture, an ejector pin device and a wafer device, wherein the lead frame fixture and a wafer are located in the same horizontal plane, the die bond arm control mechanism is located above the horizontal plane, andthe ejector pin device is located below the wafer; the wafer is divided into two areas, and the ejector pin device is located in the center of one area. The wafer is divided into two area, the ejectorpin device is arranged in the center of one partition range, after chips in one partition range are picked, the wafer device rotates automatically for 180 degrees and is used for picking the other partition of the wafer, meanwhile, the lead frame fixture rotates automatically for 180 degrees, direction consistency of the lead frame and the chips is guaranteed, the chips are grabbed rapidly and stably, and production efficiency, speed and precision are increased.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a crystal bonding process structure, a crystal bonding machine and a crystal bonding control method. Background technique [0002] At present, there are two ways for the existing equipment to realize the die-bonding process of semiconductor wafers: Method 1. The die-bonding arm of the die-bonding head swings 180° horizontally and moves up and down, and at the same time, the die ring and the lead frame are in the same plane. Combined structure; its disadvantages: 1. The swing angle of the die-bonding arm is large, resulting in increased inertia and angular velocity of the die-bonding arm, and the accuracy is difficult to control; 2. The die ring and the lead frame are on the same plane, when the die ring When widening the 8-inch and 12-inch or lead frame, the length of the die-bonding arm is too long; the length of the die-bonding arm of the current equipment: greate...

AI Technical Summary

Problems solved by technology

[0002] At present, there are two ways for the existing equipment to realize the die-bonding process of semiconductor wafers: Method 1. The die-bonding arm of the die-bonding head swings 180° horizontally and moves up and down, and at the same time, the die ring and the lead frame are in the same plane. Combined structure; its disadvantages: 1. The swing angle of the die-bonding arm is large, resulting in increased inertia and angular velocity of the die-bonding arm, and the accuracy is difficult to control; 2. The die ring and the lead frame are on the same plane, when the die ring When widening the 8-inch and 12-inch or lead frame, the length of the die-bonding arm is too long; the length of the die-bonding arm of the current equipment: greater than 200MM for an 8-inch wafer, and greater than 300MM for a 12-inch wafer, the longer the die-bonding arm leads to The inertia of the pendulum increases, making it difficult to stop steadily, affecting the accuracy and speed, thus affecting the efficiency

Method 2. The die-bonding arm of the die-bonding head moves forward and backward in a horizontal and straight line plus up and down movement, and at the same time the die ring and the lead frame are staggered by a certain plane height. The current plane height difference is greater than 30MM; its disadvantages: 1. The front and back horizontal linear movement of the crystal arm has a heavy load and a long moving distance, resulting in a relatively slow speed; 2. The long up and down lift distance leads to a relatively slow speed, which affects efficiency and production capacity; the above two methods are difficult to meet in actual use. growing production needs

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