Series multilayer qled device and its preparation method

A technology of a device and a hole transport layer, which is applied in the field of flat panel display, can solve the problems affecting the luminous efficiency of QLED devices and the low photoelectric conversion efficiency of QLED devices, and achieve the effects of maturity and controllability, industrialization, and simple operation of the method

Active Publication Date: 2020-12-11
TCL CORPORATION
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a series-connected multi-layer QLED device and its preparation method, aiming at solving the problem of low photoelectric conversion efficiency of QLED device and affecting the luminous efficiency of QLED device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Series multilayer qled device and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0013] combine figure 1 , an embodiment of the present invention provides a series-connected multilayer QLED device, including a substrate 1, an anode 2, a first hole transport layer 3, a first quantum dot light-emitting layer 4, a first electron transport layer 5, a photoelectric The conversion layer 6, the second hole transport layer 7, the second quantum dot light-emitting layer 8, the second electron transport layer 9 and the cathode 10, wherein the photoelectric conversion layer 6 is made of a photoelectric conversion material.

[0014] In the embodiment of the present invention, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a series-connected multi-layer QLED device, comprising a substrate, an anode, a first hole transport layer, a first quantum dot light-emitting layer, a first electron transport layer, a photoelectric conversion layer, and a second hole transport layer stacked in sequence. layer, a second quantum dot light-emitting layer, a second electron transport layer and a cathode, wherein the photoelectric conversion layer is made of a photoelectric conversion material.

Description

technical field [0001] The invention belongs to the field of flat panel display technology, and in particular relates to a series-connected multilayer QLED device and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and are widely used in light-emitting diodes, solar cells, and bioluminescence labeling. After more than 20 years of development, quantum dot synthesis technology has made remarkable achievements, and various high-quality quantum dot nanomaterials can be synthesized, and its photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QLEDs) with quantum dots as the light-emitting layer have become a promising next-generation display and solid-state Lighting source. Due to the advantages of high brightness, low power consumption, wide color gamut, and easy processing, quantum dot light-emitting diodes have received extensive attention and research in th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/13H10K50/115H10K71/00
Inventor 刘佳曹蔚然
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap