A kind of preparation semiconductor material cu 2 o's method

A semiconductor and nano-semiconductor technology, applied in copper oxide/copper hydroxide and other directions, can solve the problems of high cost and unstable product quality, and achieve the effects of easy control, product stability, and easy industrialization

Active Publication Date: 2021-06-29
INST OF NEW MATERIALS & IND TECH WENZHOU UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the common method has the problems of high cost or unstable product quality. Therefore, a preparation method with low cost, convenient industrial production and stable product is needed to prepare the semiconductor material Cu 2 o

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation semiconductor material cu <sub>2</sub> o's method
  • A kind of preparation semiconductor material cu <sub>2</sub> o's method
  • A kind of preparation semiconductor material cu <sub>2</sub> o's method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] (1) Microwave synthesis of Cu 2 o

[0017] Weigh 1.2101g Cu(NO 3 ) 2 ·3H 2 O and 0.5924g PVP, measure 60mL of ethylene glycol, pour it into a 100mL beaker, stir it continuously with a glass rod until the solid is completely dissolved, at this time, the solution turns blue, then pour the blue solution in the beaker into a 250mL three-neck in the flask. Heat the mixed solution to 160 °C with a power of 600 W, the solution turns from blue to brick red precipitate, this process takes about 10 min, and then set the microwave holding time to 1 min, after the reaction is over, cool the mixed solution naturally to room temperature. Finally, the prepared mixed solution was centrifuged at 10,000 rpm for 5 min, and the brick-red precipitate was washed twice with absolute ethanol and distilled water, and washed with absolute ethanol for the last time. After washing, the samples were dried in an oven at 80 °C for several hours.

[0018] (2) Product composition and structural ...

Embodiment 2

[0023] Reaction temperature on Cu 2 The effect of O morphology

[0024] figure 2 (a), (b) and (c) are prepared at reaction temperatures of 150°C, 160°C, and 170°C, respectively. 2 SEM image of O. Such as figure 2 (a), when the reaction temperature is 150°C, the morphology of the product is mostly spherical, and a small part is strip-shaped, and the spherical particle size distribution is relatively uniform. Such as figure 2 (b), when the temperature rises to 160 °C, the morphology of the product hardly changes, and the spherical particle size becomes larger. Such as figure 2 (c), when the reaction temperature rises to 170°C, the morphology of the product is spherical, the spherical particle size becomes larger and the distribution is more uniform, and the surface of the sphere becomes smooth.

Embodiment 3

[0026] Holding time vs. Cu 2 The effect of O morphology

[0027] image 3 (a), (b), (c), and (d) are the Cu obtained under the holding time of 1min, 5min, 10min, and 20min, respectively. 2 SEM images of O samples. It can be seen from the figure that when the holding time is 1 min, the shape of the product is spherical with a smaller particle size, and when the holding time increases from 1 min to 20 min, the particle size of the product spherical particles also becomes larger. This is because when the holding time increases, the degree of reaction between particles is more sufficient, and the degree of particle aggregation increases, resulting in an increase in the particle size of aggregate particles.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of semiconductor materials, in particular to a method for preparing semiconductor materials Cu 2 The method for O comprises the following steps: take by weighing Cu(NO 3 ) 2 •3H 2 O and PVP, dissolved in ethylene glycol, the solution is blue, then microwave the mixed solution to 150‑170 ° C, wait until the solution turns from blue to brick red precipitation, and then set the microwave holding time to 1min‑20min After the reaction, the mixed solution was naturally cooled to room temperature, and finally, the prepared mixed solution was centrifuged at 10,000 rpm for 5 min, and the brick red precipitate was washed twice with absolute ethanol and distilled water, and the last time was washed with absolute ethanol Washing, drying after washing to obtain the semiconductor material Cu 2 O. The method disclosed by the invention has simple process, easy control, stable product and convenient industrialization.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for preparing semiconductor materials Cu 2 O's method. Background technique [0002] Cu 2 O is a promising semiconductor oxide material with a wide range of applications, such as photovoltaic devices, light-emitting diodes, and electronic materials. It has applications in many fields and has excellent performance. Among these application areas, photothermal therapy utilizes the strong absorption of near-infrared light by nanomaterials (especially small nanoparticles) in the near-infrared region, and converts the absorbed light into heat for the treatment of various diseases, including tumor destruction cell. Due to the weak absorption of near-infrared radiation by tissues, it is able to penetrate the skin without causing extensive damage to normal tissue, making it useful for treating specific cells targeted by nanomaterials. A series of conventional nanomateri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01G3/02
CPCC01G3/02C01P2002/72C01P2004/03C01P2006/80
Inventor 王舜尹德武金辉乐刘爱丽钱鹏程
Owner INST OF NEW MATERIALS & IND TECH WENZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap