Three-level large-capacity water-cooled converter assembly based on crimping type IEGT

Abstract

The invention provides a three-level large-capacity water-cooled converter assembly based on a pressure-bonded IEGT, comprising a valve body frame assembly, wherein the valve body frame assembly is internally provided with a power device, and a compression adjustment mechanism for applying pressure to the power device is arranged between the two ends of the power device and the valve body frame assembly; and the side wall of the valve body frame assembly is provided with an AC connection terminal, the AC connection terminal is connected to the power device, the valve body frame assembly is provided with an inlet pipe and an outlet pipe, and the inlet pipe and the outlet pipe are in communication with the power device. The IEGT package form adopted by the assembly is in the form of crimping, and has the following advantages that: there is no binding wire inside, the reliability is higher, double-sided heat dissipation is achieved, the current carrying capacity is better, and the crimping-type package is adopted to achieve greater explosion-proof and moisture-proof capabilities.

Description

technical field [0001] The invention relates to the field of NPC three-level converters in the power electronics industry, in particular to a three-level large-capacity water-cooled converter assembly based on a crimping type IEGT. Background technique [0002] With the rise of offshore wind power and energy Internet, the demand for compact fully-controlled high-voltage large-capacity converters is becoming more and more urgent. At present, the voltage of the modular IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) can be up to 6500V, and the current can be up to 750A. The module with a relatively large capacity can have a voltage of 4500V, and the current can be up to 1200A. The capacity of the modular IGBT limits the capacity of the high-voltage large-capacity converter. In order to achieve a larger capacity, such as above 4MVA, the parallel connection of the modular IGBT or the topological parallel connection based on the modular IGBT must be us...

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Problems solved by technology

However, there are the following problems in the above patents: 1. The use of single-sided heat dissipation crimping IEGT leads to poor heat dissipation effect, poor flow capacity, moisture-proof ability, and explosion-proof performance; 2. The capacity of the top structure of the above-mentioned patent is small; 3. The above-mentioned patent The structure of the LRCD clamping circuit used in the complex

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