Energy-saving polycrystalline ingot casting furnace
A polycrystalline ingot casting and furnace body technology, which is applied in the field of energy-saving polycrystalline ingot casting furnaces, can solve the problems of heat loss, high cost, and high power consumption, and achieve the effects of reducing heat loss, convenient operation, and improving quality
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Embodiment 1
[0025] see Figure 1-Figure 2 , the energy-saving polycrystalline ingot casting furnace of the present embodiment includes a furnace body 1, a crucible 9 disposed in the furnace body 1, and a graphite support column 7 for supporting the crucible 9; wherein, the crucible 9 is provided around and at the bottom Graphite protection plate 4 is arranged, and heat exchange table 5 is provided under the graphite protection plate 4 at the bottom of crucible 9, and side heater 3 is provided on the outside of graphite protection plate 4 around described crucible 9, and the top of crucible 9 is provided with There is a top heater 2; it also includes a thermal field insulation felt 10, which surrounds the crucible 9, the graphite protection plate 4, the heat exchange platform 5, the side heater 3 and the top heater 2; the graphite There are three support columns 7, and they are arranged in a triangular layout at the bottom of the heat exchange platform 5; one end of each graphite support c...
Embodiment 2
[0030] The difference between this embodiment and Embodiment 1 is that: the heat insulating member 6 is a soft heat insulating felt with a thickness of 25 mm; the auxiliary heat insulating member 8 is a rigid heat insulating felt with a thickness of 15 mm, so The auxiliary heat insulating member 8 is directly placed between the top of the upper end of the graphite support column 7 and the heat exchange platform 5 . The heat insulator 6 is processed into a cylindrical shape, and is directly fitted on the outer wall of the graphite support column 7 .
[0031] Following is the energy consumption per kilogram (power consumption when every kilogram of silicon material is processed) and silicon chip efficiency (by the present invention) after the energy-saving polycrystalline ingot furnace of embodiment 1 and embodiment 2 and common polycrystalline ingot furnace Data comparison of the efficiency of converting light energy into electrical energy for silicon wafers produced by energy-...
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