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Fourth-order local active memristor circuit model

A circuit model, memristor technology, applied in CAD circuit design, instruments, electrical digital data processing, etc., can solve the problem of high development cost of memristor, and achieve the effect of simple structure

Active Publication Date: 2018-11-20
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, although a large number of memristor mathematical models have been proposed, due to the defects of nanotechnology, the development cost of the actual memristor is very high, and the marketization of memristor devices still has a long way to go.

Method used

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  • Fourth-order local active memristor circuit model
  • Fourth-order local active memristor circuit model
  • Fourth-order local active memristor circuit model

Examples

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Embodiment Construction

[0016] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] The theoretical starting point of the present invention is a novel voltage-controlled memristor mathematical model defined below:

[0018]

[0019] i(t) and u(t) represent the current and voltage of the local active memristor, and the variable x represents the state of the memristor.

[0020] According to the mathematical model of local active memristor, its equivalent circuit model can be designed, and its principle block diagram is as follows figure 1 shown.

[0021] Such as figure 1 As shown, the analog equivalent circuit of the voltage-controlled local active memristor in this example includes integrated operational amplifier U1, integrated operational amplifier U2, multipliers U3, U4, U5, U6 and a small amount of resistors and capacitors. The integrated operational amplifier U1 mainly realizes the integration operation, ...

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Abstract

The invention discloses a fourth-order local active memristor circuit model. The circuit model comprises an integrated operational amplifier U1, an integrated operational amplifier U2 and multipliersU3, U4, U5, U6. The integrated operational amplifier U1 and the multiplier U6 are respectively connected with the input end, i.e. the voltage and current test end of a local active memristor. The integrated operational amplifier U1 is used for implementing integration operation, summation operation and inversion operation and returning the output signal to the multiplier U3 so as to finally obtainthe state variable for controlling the memory value. The integrated operational amplifier U2 is used for implementing the inversion operation and addition operation so as to obtain the required memory control function. The multiplier U6 multiplies the memory control function and the input voltage so as to obtain the final memristor current. The model is used for simulating the volt-ampere characteristics of the local active memristor and replacing the actual local active memristor for experiment, application and research.

Description

technical field [0001] The invention belongs to the technical field of circuit design and relates to a local active memristor model, in particular to the design and realization of a fourth-order voltage-controlled local active memristor circuit model. Background technique [0002] After Cai Shaotang first proposed the concept of local active in 1998, in 2014 he designed a mathematical model of flow-controlled local active memristor and applied it to the simplest MLC (memristor, inductor, Capacitor) in series circuits, it is found that it has more complex dynamic behavior, which can be better applied to many fields such as circuit design, artificial neural network, non-volatile storage, etc., and has a good development prospect. [0003] At present, although a large number of memristor mathematical models have been proposed, due to the defects of nanotechnology, the development cost of the actual memristor is very high, and the marketization of memristor devices still has a l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/36G06F2115/06G06F2111/10G06F30/367
Inventor 王光义董玉姣马德明
Owner HANGZHOU DIANZI UNIV
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