Epitaxial wafer of light emitting diode and manufacturing method of epitaxial wafer

Abstract

The invention discloses an epitaxial wafer of a light emitting diode and a manufacturing method of the epitaxial wafer and belongs to the optoelectronic manufacturing technical field. The epitaxial wafer includes a flat substrate as well as a nitride nucleation layer, a Bragg reflection layer, a u type GaN layer, an n type layer, a light-emitting layer and a p type layer which are sequentially disposed on the flat substrate; periodically hollowed-out patterns are formed on the Bragg reflection layer, or the Bragg reflection layer comprises periodic protrusions which are arranged in an array onthe nitride nucleation layer; the u type GaN layer is grown on the nitride nucleation layer and covers the Bragg reflection layer; when the u type GaN layer is grown, the growth rate of the u type GaN layer on the surface of the exposed nitride nucleation layer is high, so that GaN crystals are not directly grown on the Bragg reflection layer; crystal grains grown on the surface of the exposed nitride nucleation layer have the same orientation, so that the orientations of the grown crystal grains are identical, and therefore, the dislocation density of the subsequently formed epitaxial structure can be decreased; and thus, the reduction of the dislocation density of the epitaxial wafer can be benefitted, and the crystal quality of the epitaxial wafer can be improved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic manufacturing, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) has the advantages of small size, long life, low power consumption, etc., and is currently widely used in automobile signal lights, traffic signal lights, display screens and lighting equipment. [0003] At present, GaN-based LED epitaxial wafers usually include a substrate and a nucleation layer, u-type GaN layer, n-type layer, light-emitting layer and p-type layer grown sequentially on the substrate. After the LED is energized, carriers (including electrons in the n-type layer and holes in the p-type layer) will migrate to the light-emitting layer and recombine in the light-emitting layer to emit light. [0004] In the process of realizing the present invention, the inventor finds that there are at ...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of high dislocation density in existing epitaxial wafers, an embodiment of the present invention provides an epitaxial wafer of a light emitting diode and a manufacturing method thereof

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