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NVDIMM (Non-Volatile Dual In-line Memory Module) interface data read-write device for splitting CACHE

An interface data and cache technology, applied in the field of NVDIMM interface data read and write devices, can solve the problems of slow access speed, no access time, affecting the efficiency of the host's use of memory, etc., and achieve the effect of improving the use efficiency.

Active Publication Date: 2018-11-23
北京领芯迅飞科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the access speed of NAND is slower than that of DRAM, and it does not have the definite access time of DRAM, when the data in NAND needs to be replaced to DRAM, the host must wait to access NVDIMM (the waiting time depends on the initial delay time (ten microseconds) and data exchange), which affects the efficiency of the host's use of memory

Method used

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  • NVDIMM (Non-Volatile Dual In-line Memory Module) interface data read-write device for splitting CACHE
  • NVDIMM (Non-Volatile Dual In-line Memory Module) interface data read-write device for splitting CACHE
  • NVDIMM (Non-Volatile Dual In-line Memory Module) interface data read-write device for splitting CACHE

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Embodiment Construction

[0018] The following examples are intended to illustrate the present invention, but not to limit the scope of the present invention. It should be further explained that the abbreviations of English letters involved in the present invention belong to the methods commonly used by those skilled in the art, wherein CACHE: cache memory; NVDIMM: memory module specifications integrating DRAM + non-volatile memory chips; DIMM: dual Inline memory module; DRAM: dynamic random access memory; NAND: computer flash memory device; CAS LATENCY: column address strobe time delay.

[0019] see figure 1 , figure 2 and image 3 , A method for reading and writing data of an NVDIMM interface for splitting a CACHE cache. In the method, the controller splits the DRAM into two parts, DRAM_A and DRAM_B, and the controller makes the split DRAM_A and DRAM_B two parts through a signal auxiliary channel. At any time, either one is in the data state, and the other is in the command-receiving state; when ...

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Abstract

The invention discloses an NVDIMM (Non-Volatile Dual In-line Memory Module) interface data read-write device for splitting a CACHE. In the method, a controller splits a DRAM (Dynamic Random Access Memory) into a DRAM_A and a DRAM_B; the controller enables any one of the split DRAM_A and DRAM_B to be under a data state and enables the other one to be under a command accepting state through a signalaccessory channel; when a host transmits data to a NVDIMM, the host has two states of connecting with the DRAM or the controller; when the host is connected with the controller, the host is under a command sending state; and when the host is connected with the DRAM, the host is under a data transmission state. The host of the invention is connected with any one of the following two states at anytime, wherein the first state is the DRAM_A and the DRAM_B of all capacity, and the second state is the DRAM_A (or the DRAM_B) of 1 / 2 capacity; after exchange is finished, switching is carried out forswitching time of the 100-nanosecond level, and the use ratio of the host for memory can be improved.

Description

technical field [0001] The invention relates to the technical field of computer storage, in particular to an NVDIMM interface data reading and writing device for splitting a CACHE cache. Background technique [0002] NVDIMMs can make general-purpose volatile memory modules (DIMMs) non-volatile. In the NVDIMM using the cache (CACHE) method, the capacity is much larger than that of the DIMM due to the use of non-volatile memory (such as NAND), while the speed characteristics retain the performance characteristics of the DIMM. From the perspective of the host, it is a large memory (the capacity of non-volatile memory), but the volume cost is much smaller than the DIMM of the same capacity. Big data applications such as databases are based on in-memory applications and require large-capacity memory. The DIMM memory capacity of the prior art is much smaller than that of non-volatile flash memory by more than an order of magnitude), and the price of the same capacity is much hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F12/0846G06F12/0893
CPCG06F12/0246G06F12/0848G06F12/0893
Inventor 顾兰魏海霞林琦
Owner 北京领芯迅飞科技有限公司
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