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CIGS solar cell and preparation method thereof

A technology for solar cells and back electrode layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems affecting the performance of CIGS solar cells and low conversion efficiency of CIGS solar cells, and achieve the effect of eliminating surface crystallization and improving conversion efficiency

Inactive Publication Date: 2018-11-23
BEIJING APOLLO DING RONG SOLAR TECH
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Problems solved by technology

[0004] Since the traditional CIGS solar cell absorber CIGS layer is mainly prepared by co-evaporation or sputtering followed by selenization, during the preparation process, many binary and ternary heterophases will be formed and decomposed. Binary and ternary heterophases will affect the performance of CIGS solar cells, resulting in low conversion efficiency of CIGS solar cells. Solar cells can overcome the above problems

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Embodiment Construction

[0025] In order to make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art can appreciate that, in the various embodiments of the present invention, many technical details are set forth for the reader to better understand the present invention. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present invention can be realized.

[0026] The invention relates to a preparation method of a CIGS solar cell, which comprises: forming a back electrode layer and a CIGS layer on the surface of a substrate in sequence; etching the surface of the CIGS layer, cleaning, drying and annealing after the etching is completed; A buffer layer, a window layer and a tra...

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Abstract

The invention relates to the technical field of energy, and discloses a CIGS solar cell and a preparation method thereof. The preparation method of the CIGS solar cell comprises the following steps ofsequentially forming a back electrode layer and a CIGS layer on the surface of a substrate; carrying out etching treatment on the surface of the CIGS layer, and after etching is completed, performingcleaning, drying and annealing treatment; and sequentially forming a buffer layer, a window layer and a transparent electrode layer on the surface of the annealed CIGS layer. By virtue of the CIGS solar cell and the preparation method thereof provided by the invention, the photoelectric conversion performance of the CIGS solar cell can be improved, and the conversion efficiency of the CIGS solarcell is improved.

Description

technical field [0001] The invention relates to the technical field of energy, in particular to a CIGS solar cell and a preparation method thereof. Background technique [0002] Since Wanger et al. prepared the world's first CIS (Cu-In-Se, copper indium selenide) thin film solar cell in 1974, CIS and CIGS (CuIn x Ga (1-x) Se 2 , copper indium gallium selenide) solar cells have received extensive attention from researchers in the photovoltaic industry due to their stable performance under sunlight, strong radiation resistance, large space for conversion efficiency improvement, and the ability to be deposited on flexible substrates. [0003] Traditional CIGS solar cells generally have a structure of substrate SLG / bottom electrode Mo / absorber layer CIGS / buffer layer CdS / window layer i-ZnO (intrinsic zinc oxide) / transparent conductive layer AZO (aluminum-doped zinc oxide) structure. The highest conversion efficiency of the small area of ​​the battery in the laboratory has exc...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0392H01L31/18
CPCH01L31/03923H01L31/18H01L31/0322Y02E10/541
Inventor 张立强
Owner BEIJING APOLLO DING RONG SOLAR TECH
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