Semiconductor laser and manufacturing method
A technology of lasers and semiconductors, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of complex production, high cost, complex optical paths and gratings
Active Publication Date: 2018-11-27
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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[0005] In the prior art, the method of harmonic mode-locking is used to increase the repetition rate of the semiconductor mode-locked laser above the round-trip frequency of the natural cavity. However, the semiconductor mode-locked laser implementing this method requires complex optical paths and gratings. High cost and complicated to make
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[0035] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0036] In order to make the above objectives, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0037] reference figure 1 , figure 1 It is a schematic structural diagram of a semiconductor laser provided by an embodiment of the present invention, and the semiconductor laser i...
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The invention discloses a semiconductor laser and a manufacturing method. The semiconductor laser comprises an epitaxial layer structure, an electric isolation area, a first waveguide structure, a second waveguide structure, a collimating lens and an output coupling mirror, wherein the epitaxial layer structure is divided into a first area and a second area, the electric isolation area is arrangedbetween the first area and the second area, the first waveguide structure is arranged on the first area, the second waveguide structure is arranged on the second area, a lateral wall of the second waveguide structure is in a sawtooth shape, the collimating lens is arranged on one side, far from the first area, of the second area, and the output coupling mirror is arranged on one side, far from the epitaxial layer structure, of the collimating lens. According to the semiconductor laser, a sawtooth-shaped structure on the lateral wall of the second waveguide structure and the output coupling mirror can form a resonant cavity, an end face far from the collimating lens of the epitaxial layer structure and an end face adjacent to the collimating lens can form the other resonant cavity, and thetwo resonant cavities can form a coupled cavity; when the coupled cavity effect is added into a semiconductor passive mode locking laser, high-order harmonic mold locking is achieved.
Description
Technical field [0001] The invention relates to the technical field of semiconductor lasers, and more specifically, to a semiconductor laser and a manufacturing method. Background technique [0002] Ultrashort pulse lasers are used to generate picosecond and femtosecond optical pulses. The demand in various fields has increased significantly. It is widely used in laser processing, communications, spectroscopy, microwave photonics, and frequency conversion. [0003] Semiconductor mode-locked laser diode seed sources and fiber amplifiers, such as MOPA-structured light sources, combine the compactness, stability, and cost-effectiveness of semiconductor devices, and use fiber amplifiers to adjust available power. [0004] Among them, the passive mode-locked semiconductor laser as the seed source is the light source with the highest electro-optical conversion efficiency. It has the advantages of wide coverage, long life, small size, low cost and compact structure. Therefore, passive mode-...
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IPC IPC(8): H01S5/065
CPCH01S5/0657
Inventor 佟存柱王延靖张新舒世立汪丽杰田思聪王立军
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI