A power device protection chip and its manufacturing method

A technology for protecting chips and power devices, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as increasing device area and manufacturing cost, reducing parasitic capacitance, protecting characteristics and improving reliability Effect

Active Publication Date: 2021-06-25
深圳物芯半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently commonly used power device protection chips, if the parasitic capacitance needs to be further reduced, multiple power device protection chips must be connected in parallel, which increases the device area and manufacturing cost

Method used

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  • A power device protection chip and its manufacturing method
  • A power device protection chip and its manufacturing method
  • A power device protection chip and its manufacturing method

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Experimental program
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Embodiment Construction

[0046] The invention will be described in more detail below with reference to the accompanying drawings. In the various figures, the same elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0047] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0048] If the purpose is to describe the situation directly on another layer or another a...

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PUM

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Abstract

The invention provides a power device protection chip and a manufacturing method thereof, comprising: a substrate of the first conductivity type; a first epitaxial layer of the first conductivity type grown on the upper surface of the substrate; a buried layer of the first conductivity type layer, formed in the first epitaxial layer; a second epitaxial layer of the second conductivity type, formed on the upper surface of the first epitaxial layer; a third epitaxial layer of the second conductivity type, penetrating through the second epitaxial layer and connected to the buried layer; the first injection region of the first conductivity type is formed in the second epitaxial layer and connected to the buried layer and the third epitaxial layer; a dielectric layer, the dielectric layer comprising a first portion located on the upper surface of the second epitaxial layer connected to the first portion and extending through the second epitaxial layer to a second portion of the first epitaxial layer; a polysilicon layer extending through the first portion to within the third epitaxial layer. The invention can improve device performance and reduce device cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power device protection chip and a manufacturing method thereof. Background technique [0002] The power device protection chip is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, small leakage current and reliable High performance, so it has been widely used in voltage transient and surge protection. The low-capacitance power device protection chip is suitable for high-frequency circuit protection devices, because it can reduce the interference of parasitic capacitance on the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge, as well as other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/0684H01L29/6609H01L29/861
Inventor 钟丽兰
Owner 深圳物芯半导体有限公司
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