Insulated gate bipolar transistor and forming method thereof
A bipolar transistor, insulated gate technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of improving turn-off loss
Inactive Publication Date: 2018-12-07
SEMICON MFG INT (SHANGHAI) CORP +1
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0005] The object of the present invention is to provide an insulated gate bipolar transistor and its forming method to solve the problem that the insulated gate bipolar transistor can improve the turn-off loss of the device while maintaining the turn-on voltage drop of the device
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[0047] The core idea of the present invention is that by setting an inversion doped region in the base region, and then during the turn-off process of the device, on the one hand, the expansion of the depletion region can be accelerated, and on the other hand, the empty space in the base region can also be increased. The extraction speed of the hole can effectively reduce the turn-off time of the device and improve the turn-off loss of the device. Specifically, the turn-off time of the IGBT generally includes: a turn-off delay time Td(off) during the rise of the collector voltage and a turn-off fall time Tf when the collector current drops. Among them, the turn-off delay time Td(off) is, in the initial stage of turn-off, the depletion region expands, and then the time for the voltage of the collector region to rise gradually; the turn-off fall time Tf is, in the later stage of turn-off, The holes injected into the base region cannot be neutralized or extracted quickly, but g...
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Abstract
The invention provides an insulated gate bipolar transistor and a forming method thereof. The insulated gate bipolar transistor comprises a collector region, a base region, a well region formed in thebase region, and an inversion doping region formed in the base region, wherein a spacing is maintained between the inversion doping region and the well region. According to the insulated gate bipolartransistor provided by the invention, through forming the inversion doping region in the base region, a PN junction structure is formed between contact surfaces of the inversion doping region and thebase region, thus the expansion speed of a depletion region can be accelerated in the turn-off process of a device. Further, holes in the base region can be collected in the inversion doping region,the dissociation speed of the holes is accelerated, the turn-off time of the IGBT device is greatly shortened, and the turn-off loss of the IGBT device is effectively improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an absolute bipolar transistor and a forming method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) is a new type of high-power device, which combines MOSFET gate voltage control characteristics and low on-resistance characteristics of bipolar transistors, improving device withstand voltage and on-resistance The situation of mutual containment has the advantages of high voltage, high current, high frequency, high power integration density, large input impedance, small on-resistance, and low switching loss. It has gained wide application space in many fields such as frequency conversion home appliances, industrial control, electric and hybrid vehicles, new energy, and smart grid. [0003] When the IGBT is turned off, there is usually a turn-off delay problem, which increases the turn-off loss of the device....
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0619H01L29/66325H01L29/7393
Inventor 刘剑
Owner SEMICON MFG INT (SHANGHAI) CORP