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Chemo-mechanical polishing solution applicable to sapphire polishing

A chemical machinery, polishing liquid technology, applied in surface polishing machine tools, grinding/polishing equipment, polishing compositions containing abrasives, etc., can solve problems such as low polishing efficiency, surface scratches, pits, etc. Effect of polishing rate, reducing incidence, improving surface quality

Active Publication Date: 2018-12-14
上海映智研磨材料有限公司
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  • Abstract
  • Description
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Problems solved by technology

[0004] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of chemical mechanical polishing liquid, be used to solve the low polishing efficiency of the sapphire substrate polishing liquid in the prior art, there are scratches, scratches, pits, etc. on the surface defect problem

Method used

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  • Chemo-mechanical polishing solution applicable to sapphire polishing

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Embodiment 1～4

[0027] In Example 1-4, under the condition of mechanical stirring, the required amount of alumina particles was added to deionized water for dispersion and dilution, then a dispersant, a rate accelerator were added in sequence, and finally a pH regulator was added and fully stirred evenly. Comparative examples 1-2 were also prepared by the same method. Each embodiment is calculated according to the weight of 100kg.

[0028] Table 1 Chemical Mechanical Polishing Fluid Components and Their Consumption

[0029]

[0030] The polishing conditions for chemical mechanical polishing of the sapphire substrate chemical mechanical polishing using the above polishing liquid are shown in Table 2;

[0031] Table 2 Polishing conditions

[0032] polisher

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Abstract

The invention provides an alumina-based chemo-mechanical polishing solution applicable to sapphire substrate polishing and an application of the chemo-mechanical polishing solution. The chemo-mechanical polishing solution at least comprises the following components in parts by weight: 35-55 parts of alumina polishing particles, 5-12 parts of an oxidant, preferably, 7-10 parts of the oxidant, 0.1-10 parts of a rate promoter, 2-5 parts of a dispersant, preferably, 3-4 parts of the dispersant, a proper quantity of a pH regulator and a proper amount of water. The polishing rate of the polishing solution is increased from a mechanical angle and a chemical angle; besides, alumina has good dispersibility, the occurrence rate of surface defects such as scratches and the like is reduced, and the surface quality is improved.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid suitable for sapphire polishing, which belongs to the field of chemical industry. Background technique [0002] Sapphire (Al 2 o 3 ) is a multifunctional oxide crystal with excellent optical, physical and chemical properties. It is easy to obtain large-scale epitaxial films. It is widely used as a substrate in optoelectronic technology, optical communication windows and microelectronics industry. Because the surface quality of sapphire has a very important impact on the performance and quality of LED devices, the final polishing process has high requirements and becomes the most important process. However, due to the high hardness and high brittleness of sapphire crystal materials, it is a typical extremely difficult material to process. Its polishing process has experienced mechanical polishing, bath polishing, float polishing, mechanical chemical polishing (MCP), chemical mechanical P...

Claims

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Application Information

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IPC IPC(8): C09G1/02B24B29/00
CPCB24B29/00C09G1/02
Inventor 张泽芳彭诗月
Owner 上海映智研磨材料有限公司
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