Medium-thick epitaxial preparation method

A thick epitaxy and epitaxy technology used in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc.

Active Publication Date: 2018-12-14
SHANGHAI JINGMENG SILICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using the existing technology level, the inventors calculated that for epitaxy with a thickness greater than 15 microns, the production cost of single-chip epitaxy equipment, mainly including gas costs and maintenance costs, is significantly higher than that of multi-chip epitaxy equipment

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0025] The preparation method of thick epitaxy in this embodiment includes the following steps: Step one, etching the cavity 1, wherein a heat absorption device is provided between the base of the cavity 1 and the air outlet,

[0026] Step a: First, perform a 15-second temperature increase to increase the temperature of the cavity 1 to 1120°C. During this process, 3 liters of hydrogen gas per minute is passed;

[0027] Step b. Then perform the first step of etching. The duration is 10 seconds, the temperature is maintained at 1120°C, the hydrogen is 3 liters / minute, and the hydrogen chloride is 15 liters / minute;

[0028] Step c. Then perform the second step of etching. The duration is 8*(T-4) seconds, and the duration is at least 15 seconds. T is the epitaxial thickness that needs to be grown on the silicon wafer in the cavity 1, such as a certain type of customer The product epitaxial thickness specification is 6 microns or 30 microns, T is correspondingly set to 6 or 30, the temper...

Embodiment 2

[0036] The preparation method of thick epitaxy in this embodiment includes the following steps: step one, etching the cavity 1, wherein a heat absorption device is provided between the base of the cavity 1 and the air outlet,

[0037] Step a: First, perform a temperature increase for 20 seconds to increase the temperature of the cavity 1 to 1170°C. During this process, 5 liters of hydrogen gas per minute is passed;

[0038] Step b. Then perform the first step of etching, which lasts for 15 seconds, maintains the temperature at 1170°C, blows 5 liters / min of hydrogen, and blows 20 liters / min of hydrogen chloride;

[0039] Step c. Then perform the second step of etching. The duration is 8*(T-2) seconds, and the duration is at least 20 seconds. T is the epitaxial thickness that needs to be grown on the silicon wafer in the cavity 1, and the temperature is maintained at 1170°C. 20 liters of hydrogen per minute and 20 liters of hydrogen chloride per minute;

[0040] The heat absorption devi...

Embodiment 3

[0052] The preparation method of thick epitaxy in this embodiment includes the following steps: step one, etching the cavity 1, wherein a heat absorption device is provided between the base of the cavity 1 and the air outlet,

[0053] Step a. First, perform a temperature increase of 17 seconds to increase the temperature of the cavity 1 to 1150°C. During this process, 4 liters of hydrogen gas per minute is passed;

[0054] Step b. Then perform the first step of etching, the duration is 12 seconds, the temperature is maintained at 1150°C, the hydrogen gas is 4 liters / min, and the hydrogen chloride is 17 liters / min;

[0055] Step c. Then perform the second step of etching. The duration is 8*T seconds and the duration is at least 18 seconds. T is the epitaxial thickness that needs to be grown on the silicon wafer in the cavity 1, the temperature is maintained at 1150°C, and the hydrogen gas is 18 liters / Minutes, and 18 liters of hydrogen chloride per minute;

[0056] The heat absorption...

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Abstract

The invention discloses a medium-thick epitaxial preparation method, comprising the following steps: step 1, etching a cavity body, wherein a heat absorbing device is arranged between a base and an air outlet of the cavity body; step 2, growing a layer of polysilicon layer on the base; step 3, etching the cavity body; and step 4, etching the cavity body. 3, that silicon wafer enters the cavity forepitaxial growth. The invention can reduce the gas cost and the maintenance cost of epitaxial preparation, and the epitaxial quality is higher.

Description

Technical field [0001] The invention relates to a method for preparing medium thickness epitaxy. Background technique [0002] The epitaxial process is to use the reduction reaction of trichlorosilane or dichlorodihydrosilicon with hydrogen to grow single crystal epitaxy on a single crystal substrate silicon wafer. It is widely used in power discrete devices, microelectronics and mechanical processing systems, etc. In semiconductor devices, different device applications and structures require different epitaxial thicknesses. In known applications, it is used from less than 1 micron to more than 100 microns. According to the requirements of different applications and structures of epitaxial quality, combined with the consideration of production cost, the industry has developed multi-chip epitaxial equipment. For 8-inch silicon wafers, such as the 3061 model of Italian LPE company and the American Applied Materials company Centura model and Episilon model of American ASM company. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01J37/32
CPCH01J37/32522H01J37/32862H01L21/02532H01L21/02634
Inventor 陈海波
Owner SHANGHAI JINGMENG SILICON CORP
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