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A superlarge chip area N substrate unidirectional snapback TVS device structure

A chip area and device structure technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as device short circuit, achieve the effect of improving packaging yield, reducing size, and reducing short circuit risk

Pending Publication Date: 2018-12-18
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the Ag flocs 42 produced by the back metal 41 during scribing will connect the back metal and the back P diffusion region 32 together, the glue 51 forms a short-circuit path through the back gold 41, Ag flocs 42 and the rear P diffusion region 32. Make the device short-circuit bad phenomenon

Method used

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  • A superlarge chip area N substrate unidirectional snapback TVS device structure
  • A superlarge chip area N substrate unidirectional snapback TVS device structure
  • A superlarge chip area N substrate unidirectional snapback TVS device structure

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Embodiment

[0017] Such as image 3 As shown, a super large chip area N substrate unidirectional snapback TVS device structure of the present invention includes a TVS chip and a carrier, and the size of the TVS chip and the carrier is consistent in length and width. It is characterized in that the TVS The area of ​​the anode metal on the back of the chip is smaller than that of the carrier and does not extend to the edge of the carrier.

[0018] An oxide layer is provided on the back of the TVS chip, and the height difference between the anode metal on the back and the oxide layer is less than 1um.

[0019] Under the structure of the present invention, the height difference between the metal on the back and the oxide layer is less than 1um, which will not affect the glue brushing process, and can also reduce the difficulty of glue brushing and the loss of equipment, and improve the efficiency of core loading; Fillers are used, so chips and finished products will not contain lead and halo...

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Abstract

A superlarge chip area N substrate unidirectional snapback TVS device structure comprise a TVS chip and a carrier, wherein the TVS chip and the carrier are consistent in length and width, and the TVSchip is characterize in that the area of the anode metal on the back surface of the TVS chip is smaller than the area of the carrier and does not extend to the edge of the carrier. As that backside metal pattern process is changed, the backside metal size is reduced, the backside metal is not scratched when scratching, the generation of Ag floc is avoided, the short-circuit risk is reduced, and the package yield is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor chip packaging technology, and in particular relates to a super large chip area N-substrate unidirectional snapback TVS device structure. Background technique [0002] At present, mobile phones and their ancillary products are the most concerned industries at present, and the center of the entire integrated circuit industry is shifting towards the mobile phone and their ancillary products industries: the most advanced chip technology, the most high-end manufacturing process and the most efficient assembly technology, etc. They are all moving closer to the mobile phone industry. With the continuous improvement of chip technology, high-speed fast charging technology, and ultra-thin and ultra-light requirements, reliability is facing major challenges. There are more and more failures of EOS, ESD, and surge, and the repair rate is also increasing sharply. This makes the entire Overvoltage prote...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/417H01L29/861H01L21/329
CPCH01L29/417H01L29/6609H01L29/8613
Inventor 苏亚兵王允蒋骞苑苏海伟赵德益叶毓明李亚文张利明吴青青冯星星杜牧涵赵志方
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS