A dry etching apparatus

Abstract

A dry etching apparatus includes a gas supply portion located in an upper electrode of the dry etching apparatus and disposed parallel to a wafer, a lower surface area of the gas supply portion beingnot smaller than an upper surface area of the wafer,. The gas supply portion sequentially comprises a central region, an intermediate region surrounding the central region and an edge region surrounding the intermediate region from inside to outside, wherein the edge region is divided into at least two edge region gas chambers, and the edge region gas chambers penetrate the edge region; The waferhas a uniform etching rate by adjusting the reaction gas in each region of the gas supply portion.

Description

technical field [0001] The invention belongs to the field of semiconductor equipment and relates to dry etching equipment. Background technique [0002] Etching is a technology that removes materials using chemical reactions or physical impacts. In fact, in a narrow sense, it is photolithographic etching. Etching treatment to remove the part that needs to be removed. Generally, etching technology can be divided into wet etching and dry etching. It is a very important process in semiconductor manufacturing process, microelectronics manufacturing process and micro-nano manufacturing process. The step is the main process of patterning (pattern) processing associated with photolithography. [0003] Plasma etching is the most common form of dry etching. Its principle is: the gas exposed to the electronic region forms a plasma. When the plasma is accelerated by an electric field, it will release enough energy to promote the plasma and material The surface reacts. At present, i...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a dry etching device for solving the problem that the prior art can only roughly regulate the distribution of the reaction gas, but cannot precisely adjust the distribution of the reaction gas. And in the existing Lam machine, due to the protruding cantilever contained under the ESC, the reactive gas distribution in the edge area of ​​the wafer is uneven when the gas is pumped, resulting in different etching rates in the edge area of ​​the wafer. The etching of the edge area is uneven, which affects the quality of the subsequent wafer preparation

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