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Back-illuminated image sensor and forming method thereof

An image sensor, back-illuminated technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as pixel crosstalk, and achieve the effect of improving the anti-crosstalk effect

Inactive Publication Date: 2018-12-28
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the existing back-illuminated CMOS image sensors, Deep Trench Isolation (DTI) is usually made on the back of the chip to separate different pixels and reduce the electrical signal crosstalk between adjacent pixels. However, DTI is usually etched into The middle position in the thickness direction of the chip, so there is still the possibility of crosstalk between adjacent pixels

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  • Back-illuminated image sensor and forming method thereof
  • Back-illuminated image sensor and forming method thereof
  • Back-illuminated image sensor and forming method thereof

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Embodiment Construction

[0047] figure 1 A schematic diagram of a front end of line (FEOL) structure of a back-illuminated CMOS image sensor is provided. The front end structure includes an active layer 108 and a front end of the active layer 108 (ie figure 1Active layer 108 upper surface) circuit layer, the active layer 108 is provided with a plurality of photodiodes 102, floating diffusion region 106 and deep trench isolation structure 110, the circuit layer includes at least as shown in the figure The transfer tube gate 104 for transferring photoelectrons in the photodiode to the floating diffusion region 106 .

[0048] Wherein, the deep trench isolation structure 110 is obtained from the back side of the active layer 108 ( figure 1 The lower surface of the middle active layer 108) has a trench structure extending toward the inside (front side) of the active layer 108. figure 1 The deep trench isolation structure 110 used in the back-illuminated CMOS image sensor is produced by an etching method,...

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Abstract

The invention provides a back-illuminated image sensor comprising: an active layer, wherein the active layer is provided with photodiodes; a deep trench isolation structure disposed between the photodiodes, the deep trench isolation structure being configured to extend from a back side of the active layer toward a front side of the active layer. The deep trench isolation structure includes a firstdeep trench isolation structure and a second deep trench isolation structure, the first deep trench isolation structure having a trench depth greater than the second deep trench isolation structure.The back-illuminated image sensor provided by the invention can reduce or eliminate the electrical signal crosstalk between adjacent photodiodes while avoiding the limitation of the trench depth.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and more specifically, the invention relates to a back-illuminated image sensor and a manufacturing method thereof. Background technique [0002] The image sensor is developed on the basis of photoelectric technology, and it is a sensor that can perceive optical image information and convert it into a usable output signal. [0003] Image sensors can be divided into charge-coupled device (CCD) image sensors and complementary metal oxide (Complementary Metal Oxide Semiconductor, CMOS) image sensors according to the principles they adopt, in which CMOS image sensors are based on traditional CMOS technology. , has better process compatibility, which should make the CMOS image sensor have a wider application prospect. [0004] The CMOS image sensor (CMOS Image Sensor, CIS) is divided into two types, the front illumination type and the back illumination type. The back-illuminated t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14683
Inventor 高俊九李志伟黄仁德
Owner HUAIAN IMAGING DEVICE MFGR CORP