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Memory bad block management method, device and flash memory

A management method and storage technology, applied in the field of data storage, can solve the problems of long waiting time for bad block judgment and reduced data storage throughput, and achieve the effect of improving data storage throughput and reducing the waiting time for judgment.

Active Publication Date: 2022-03-18
湖南率为控制科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to propose a memory bad block management method, device and flash memory, aiming to solve the problem in the prior art that the storage device bad block judgment waiting time is long and the data storage throughput is reduced

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  • Memory bad block management method, device and flash memory
  • Memory bad block management method, device and flash memory
  • Memory bad block management method, device and flash memory

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Embodiment Construction

[0033] The solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0034] The present invention proposes a memory bad block management method, such as figure 1 As indicated, the management approach includes:

[0035] Step S100, obtaining the starting address from the access operation initiated by the upper layer application.

[0036] In this step, the upper layer application may be an access operation issued by computer software, or an access operation issued by software in a mobile terminal (such as a mobile phone). After star...

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Abstract

The invention discloses a memory bad block management method. The management method includes: obtaining a start address from an access operation initiated by an upper-layer application; If the traversed block address is available, perform read and write operations, and increment the currently traversed block address by one bit to traverse the bad block table; if the currently traversed block address is unavailable, increment the currently traversed block address by one digit to traverse all Describe the bad block table. The invention also discloses a bad block management device, which includes an initial address acquisition module, an address traversal module, a data read-write module and an address generation module. The present invention also discloses a flash memory, which includes a control unit and a storage unit, and the control unit includes a processor, a storage medium and computer program codes stored in the storage medium. The invention reduces the waiting time for judging bad blocks of the memory and improves the throughput of data storage.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a memory bad block management method, device and flash memory. Background technique [0002] With the development of instrument science and technology, the amount of data generated by various instruments and equipment is increasing, and it is often necessary to use large-capacity storage in the embedded system inside the instrument to store various data. As a non-volatile storage medium, NAND FLASH has the characteristics of large capacity, high density, and fast speed, so it is widely used in consumer electronics, data acquisition, and industrial control. The internal storage area of ​​the NAND FLASH chip is divided into several blocks, and each block contains several pages. It uses the page as the basic unit for writing and reading, and uses the block as the basic unit for erasing. It has a very fast reading, writing and erasing speed. However, due to its storage principl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
CPCG06F3/0613G06F3/064G06F3/0679
Inventor 高爽宋来亮
Owner 湖南率为控制科技有限公司
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