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Semiconductor structures and methods of forming them

A semiconductor and protective structure technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve difficult problems and achieve the effect of avoiding bridging

Active Publication Date: 2021-10-15
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, it is more difficult to form the replacement gate structure

Method used

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  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] There are many problems in the method of forming the semiconductor structure, for example, the difficulty of forming the replacement gate structure is relatively poor.

[0029] In combination with a method for forming a semiconductor structure, the reason why it is difficult to form a replacement gate structure formed by the method is analyzed:

[0030] Figure 1 to Figure 3 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.

[0031] Please refer to figure 1 , providing a base (not shown in the figure), the base has fins 100, the fins 100 include several first regions A and second regions B between adjacent first regions A, the fins There is an opening in the second region B of the part 100 (not marked in the figure); an initial isolation layer 101 is formed in the base, the sidewall of the fin 100 and the opening; A mask layer 102, the mask layer 102 has a mask opening 103, the bottom of the mask opening 103 exposes ...

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Abstract

A semiconductor structure and a method for forming the same, wherein the method includes: providing a substrate with fins on the substrate, the fins include a plurality of first regions and second regions located between adjacent first regions, and the second regions of the fins have Opening; there is an initial isolation layer on the base, the sidewall of the fin and the opening; a protective structure is formed on the initial isolation layer and the first region of the fin part on both sides of the initial isolation layer, the protective structure includes: the first protective layer and the The second protection layer on the sidewall of the first protection layer, the density of the first protection layer is higher than that of the second protection layer; an etching process is used to remove part of the initial isolation layer to form an isolation layer, the surface of the isolation layer is lower than the top of the fin, and cover part of the sidewall of the fin. The formed device has better performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] As the integration level of semiconductor devices increases, the critical dimensions of transistors continue to shrink. However, as the size of the transistor decreases sharply, the thickness of the gate dielectric layer and the operating voltage cannot be changed accordingly, which makes it more difficult to suppress the short channel effect and increases the channel leakage current of the transistor. [0003] The gate of the Fin Field-Effect Transistor (FinFET) has a forked 3D structure similar to a fish fin. The channel of the FinFET protrudes from the surface of the substrate to form a fin, and the gate covers the top surface and sidewall of the fin, so that the inversion layer is formed on each side of the channel, and the connection of the circuit can be controlled on both sides...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
CPCH01L29/66795
Inventor 周飞洪中山
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP