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Method of forming a semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device formation, can solve problems such as large size, small size, and size that cannot meet the expected target, and achieve the effect of the top surface being even

Active Publication Date: 2021-11-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the size of the structure obtained by photoresist etching cannot reach the expected target, that is, the size is too large or too small, and the sidewall roughness of the formed structure is relatively large.
More importantly, smaller sized trenches or structural line segments cannot be achieved with photoresist

Method used

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  • Method of forming a semiconductor device
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  • Method of forming a semiconductor device

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Experimental program
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Embodiment Construction

[0027] As mentioned above, the size of the line segment of the mask structure formed by the existing process is relatively large, and the surface of the structure is relatively rough.

[0028] After research, it was found that the reasons for the above problems: the use of masks to directly etch to form patterns of specific structures, the process of this etching process is difficult to control, over-etching is prone to occur, and the line width of lithography cannot be very narrow, so The resulting line segment size is relatively large.

[0029] In order to solve this problem, the present invention provides a method for forming a semiconductor device. The mask layer is formed multiple times, and the existing mask structure is divided by punching, thereby obtaining a mask structure with a smaller size. line segment. At the same time, the surface of the line segment of the mask structure is relatively smooth and the knots are regular.

[0030] Various exemplary embodiments of...

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Abstract

The invention discloses a method for forming a semiconductor device, comprising: providing a semiconductor substrate, an etching stop layer is formed on the semiconductor substrate, a first mask structure is formed above the etching stop layer, and the first mask structure Comprising a plurality of first sub-mask structures distributed at intervals, including first grooves between adjacent first sub-mask structures; forming a second mask structure filled with the first grooves; etching part of the second mask structure , to form a connection hole, the inner wall of the connection hole includes part of the sidewalls of the two adjacent first sub-mask structures; and filling the connection hole, to form a third mask structure. Further, a mask line segment structure with smaller size and more regular structure is obtained.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] As the size of semiconductor devices shrinks, the size of semiconductor structures becomes smaller. At this time, other structures compatible with the small-sized structure are required. Typically, photoresist is used to etch the material to obtain small-scale devices and structures. However, the size of the structure obtained by photoresist etching cannot reach the expected target, that is, the size is too large or small, and the sidewall of the structure is relatively rough. More importantly, smaller size trenches or structure segments cannot be obtained with photoresist. [0003] Therefore, there is an urgent need for a method for forming a semiconductor device capable of forming trenches or structural line segments with smaller dimensions. SUMMARY OF THE INVENTION [0004] The e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/033H01L21/027
CPCH01L21/0276H01L21/0332H01L21/0335H01L21/0337
Inventor 张海洋陈卓凡
Owner SEMICON MFG INT (SHANGHAI) CORP