Heat laser strip device

A technology of stripping equipment and heating laser, which is applied in laser welding equipment, metal processing equipment, welding equipment, etc., and can solve problems such as residual stress and fragility of GaN epitaxial wafers

Pending Publication Date: 2019-01-04
SINO INNOV SEMICON (PKU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the above-mentioned technical problems, the object of the present invention is to provide a heating laser stripping device to solve the residual s

Method used

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Examples

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Embodiment 1

[0029] A heating laser peeling device, comprising a laser peeling device body (for the specific structure and usage of the laser peeling device body, refer to the patent in the background technology), the laser peeling device body includes a mobile platform 10 arranged at the lower end, such as figure 1 As shown, the mobile platform 10 is provided with a heating base 1, and the heating base 1 is provided with a sample stage. The electric heating device 2, the lower end of the sample table 3 is also provided with a thermocouple 4 for detecting the temperature of the sample table 3, the top of the sample table 3 is covered with a heat preservation cover 5, and the top of the heat preservation cover 5 is in contact with the sample table. The position corresponding to 3 is provided with a thermal insulation lens 6 which is convenient for the laser to pass through. The lower end of the heat preservation cover 6 is clamped and fixed in the groove 101 at the upper end of the heating ...

Embodiment 2

[0031] Others are the same as in Embodiment 1, except that the heat preservation cover 6 is not used to form a closed heating cavity.

Embodiment 3

[0033] Others are the same as in Example 1, except that the electric heating device 2 heats the sample stage to 600° C. or 700° C. within 4 minutes.

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Abstract

A laser stripping apparatus is disclose, include a laser strip apparatus body, A laser stripping apparatus body include a mobile platform arranged at a lower end, the mobile platform is provided witha heating base, A sample table is arranged on the heating base, the heating base comprises an electric heating device arranged below the sample table and used for heating the sample table, A temperature sensor for detect that temperature of the sample table is also arranged at the low end of the sample table, and a heat insulating cover is cover above the sample table, and a heat insulating transparent window convenient for the laser to pass through is arranged at the position corresponding to the top end of the heat insulating cover and the sample table. The heating laser stripping apparatusof the present invention provides a suitable temperature environment for stripping GaN epitaxial wafers, solves the problem of residual stress of GaN epitaxial wafers grown on a sapphire substrate, and avoids the occurrence of easy fragmentation during stripping.

Description

technical field [0001] The invention relates to a heating laser stripping device. Background technique [0002] The Ⅲ / Ⅴ nitrides mainly composed of GaN, InGaN and AlGaN are semiconductor materials that have attracted much attention in recent years. They are the core components of light-emitting diodes in semiconductor lighting. The physical and chemical stability, high saturation electron mobility and other characteristics make it the most preferred material for optoelectronic devices such as lasers and light-emitting diodes. [0003] However, due to the limitations of GaN (gallium nitride) growth technology, most of today's large-area GaN materials are grown on sapphire substrates. Although the GaN grown on the sapphire substrate is of high quality and the most widely used, the development of GaN (third-generation semiconductor material)-based semiconductor devices is greatly limited due to the non-conductivity and poor thermal conductivity of sapphire. In order to avoid ...

Claims

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Application Information

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IPC IPC(8): H01L21/78H01L21/67B23K26/402
CPCH01L21/67103H01L21/7813B23K26/402
Inventor 孙永健莫少琼豆学刚王光普郭坚
Owner SINO INNOV SEMICON (PKU) CO LTD
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