Fast recovery diode and preparation method thereof, and electronic device
A technology for recovering diodes and electronic equipment, which is applied in the field of electronics and can solve problems such as high voltage spikes, long reverse recovery time, and large forward voltage drop.
Active Publication Date: 2022-02-18
BYD SEMICON CO LTD +1
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- Abstract
- Description
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- Application Information
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Problems solved by technology
[0005] At present, fast recovery diodes have problems such as large forward voltage drop, long reverse recovery time, and high voltage spikes.
Method used
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[0021] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0022] In one aspect of the invention, the invention provides a fast recovery diode. refer to figure 1 , the fast recovery diode includes: a substrate 100 , an ohmic contact region 900 , an epitaxial layer 300 , an ion-doped region 400 , a first metal region 10 , a first electrode 600 and a second electrode 800 . Wherein, the ohmic contact region 900 is formed in the substrate 100, the epitaxial layer 300 is disposed on the substrate 100, the ion-doped region 400 is disposed on the side of the epitaxial layer 300 away fr...
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Abstract
The invention provides a fast recovery diode, a preparation method and electronic equipment. The fast recovery diode includes: a substrate, an ohmic contact region is formed in the substrate; an epitaxial layer, the epitaxial layer is arranged on the substrate; an ion-doped region, the ion-doped region is arranged on the A side of the epitaxial layer away from the substrate; a first metal region, the first metal region is arranged in the epitaxial layer, and the first metal region is arranged adjacent to the ion-doped region, so A Schottky contact is formed between the first metal region and the epitaxial layer; a first electrode is arranged on the surface of the epitaxial layer away from the substrate; and a second electrode is arranged on the surface of the epitaxial layer. The second electrode is disposed on a side of the substrate away from the epitaxial layer. Therefore, the fast recovery diode can have a faster reverse recovery time, a smaller forward conduction voltage drop and a greater recovery softness.
Description
technical field [0001] The invention relates to the field of electronics, in particular to a fast recovery diode, a preparation method and electronic equipment. Background technique [0002] At present, in electronic circuits, fast recovery diodes are one of the most commonly used basic electronic components, and play an important role in switching devices. High-power fast recovery diodes used with switching devices are usually called freewheeling diodes. Proper selection of freewheeling diode characteristics can significantly reduce power losses in switching devices, diodes, and many other circuit components. It can also reduce the radio frequency interference and electromagnetic interference caused by the freewheeling diode, so as to minimize or even remove the absorbing circuit. At present, the most commonly used fast recovery diode is a traditional pin structure in structure, that is, a base region (i region) is added between the P-type silicon material and the N-type ...
Claims
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IPC IPC(8): H01L29/868H01L29/47H01L21/329
CPCH01L29/47H01L29/66204H01L29/868
Inventor 王艳春周亮
Owner BYD SEMICON CO LTD