An efficient six-junction solar cell grown on double sides and a preparation method thereof

A solar cell, double-sided growth technology, applied in the field of solar photovoltaic power generation, can solve problems such as open circuit voltage reduction, influence of Ge sub-cell structure, etc.

Active Publication Date: 2019-01-04
ZHONGSHAN DEHUA CHIP TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in the process of preparing GaInNAs sub-cells, it is necessary to combine high-temperature annealing process to improve the photoelectric performance of GaInNAs cells. If it is based on Ge substrates, high-temperature annealing will also affect the structure of Ge sub-cells, reducing its open circuit voltage.

Method used

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  • An efficient six-junction solar cell grown on double sides and a preparation method thereof
  • An efficient six-junction solar cell grown on double sides and a preparation method thereof
  • An efficient six-junction solar cell grown on double sides and a preparation method thereof

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Embodiment Construction

[0042] The present invention will be further described below in conjunction with specific examples.

[0043] Such as figure 1 As shown, the high-efficiency six-junction solar cell grown on both sides provided by this embodiment includes a GaAs substrate, and the GaAs substrate is an n-type GaAs single wafer; The structure is sequentially provided with a GaAs buffer layer, a GaAs sub-cell, an AlGaAs sub-cell, and an AlGaInP sub-cell from bottom to top; on the second surface of the GaAs substrate, a first GaInNAs sub-cell, a first GaInNAs sub-cell, The second GaInNAs sub-cell, Ga x In 1-x P graded transition layer and Ga x In 1-x As sub-cell; the GaAs buffer layer and the GaAs sub-cell are connected through a first tunnel junction, the GaAs sub-cell and the AlGaAs sub-cell are connected through a second tunnel junction, and the AlGaAs sub-cell and the AlGaInP sub-cell are connected are connected through a third tunnel junction, the first GaInNAs subcell and the second GaInN...

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Abstract

The invention discloses a efficient six-junction solar cell grown on double sides and a preparation method thereof, by means of metal organic chemical vapor deposition, based on a double-sided polished n-type GaAs single crystal wafer, a GaAs buffer layer, a GaAs sub-cell, an AlGaAs sub-cell and an AlGaInP sub-cell are sequentially arranged on the first surface of the GaAs substrate from bottom totop, the second side of the GaAs substrate is sequentially provided with a first GaInNAs sub-cell, a second GaInNAs sub-cell, and a GaxIn<1-x>P Gradient Transition Layer and GaxIn<1-x>As sub-batteryfrom top to bottom, each sub-battery being connected through a tunnel junction. The band gaps of the six-junction solar cells are 2.2 eV, 1.7 eV, 1.42 eV, 1.1 eV, 0.9 eV and 0.7 eV, respectively. Thecurrent mismatch of each sub-cell is small, which reduces the heat loss in the photoelectric conversion process, increases the open-circuit voltage of the cell and improves the photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic power generation, in particular to a high-efficiency six-junction solar cell grown on both sides and a preparation method thereof. Background technique [0002] From the perspective of the development of photovoltaic power generation technology, solar cells can be roughly divided into three categories: first-generation crystalline silicon solar cells, second-generation thin-film solar cells, and third-generation GaAs multi-junction solar cells. At present, gallium arsenide multi-junction solar cells are widely used in concentrated photovoltaic systems and space power systems because their conversion efficiency is significantly higher than that of crystalline silicon cells. The mainstream structure of traditional gallium arsenide multi-junction solar cells is a GaInP / GaInAs / Ge triple-junction solar cell composed of GaInP, GaInAs and Ge sub-cells. The cell structure maintains lattice matc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0687H01L31/0735H01L31/18
CPCH01L31/0304H01L31/03046H01L31/0687H01L31/0735H01L31/184H01L31/1844Y02E10/544Y02P70/50
Inventor 黄辉廉黄珊珊张小宾潘旭刘建庆彭娜
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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