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Pixel-delimiting structure and preparation method thereof, and OLED device

A technology of pixel definition and pixel definition layer, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc. The effect of avoiding color mixing and improving performance

Inactive Publication Date: 2019-01-08
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the production process of the existing printed OLED, the pixel defining layer is a hydrophilic material, which will lead to uneven film thickness of the organic electroluminescent film, such as Figure 1a As shown, the pixel defining layer is a hydrophobic material, which will lead to edge leakage and uneven film thickness of the organic electroluminescent film, such as Figure 1b shown

Method used

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  • Pixel-delimiting structure and preparation method thereof, and OLED device
  • Pixel-delimiting structure and preparation method thereof, and OLED device
  • Pixel-delimiting structure and preparation method thereof, and OLED device

Examples

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Embodiment 1

[0030] refer to figure 2 , in this embodiment, the pixel defining structure 1 includes a substrate 11 and a pixel defining film 12, the pixel defining film 12 includes two layers of pixel defining layers, and the two layers of pixel defining layers are sequentially stacked on the substrate 11 along the direction away from the substrate 11 On the top, that is, two layers of pixel defining layers are stacked sequentially from bottom to top on the substrate 11. In this embodiment, the pixel defining layer at the bottom of the pixel defining film 12 is called the first pixel defining layer 10, and the 12 The top pixel defining layer is called the second pixel defining layer 20, the first pixel defining layer 10 is hydrophilic, and the second pixel defining layer 20 is hydrophobic.

[0031] The substrate 11 includes a TFT array layer 11a and a transparent electrode layer 11b, the transparent electrode layer 11b is disposed on the TFT array layer 11a, and the transparent electrode ...

Embodiment 2

[0053] refer to Figure 5 The difference between this embodiment and Embodiment 1 is that the pixel defining film 12 includes N layers of pixel defining layers, and the N layers of pixel defining layers are sequentially stacked on the substrate 11 along the direction away from the substrate 11, that is, N layers of pixel The defining layers are sequentially stacked on the substrate 11 from bottom to top. In this embodiment, the N layers of pixel defining layers are referred to as the first pixel defining layer, the second pixel defining layer, . . . For the N-1th pixel defining layer and the Nth pixel defining layer, the first pixel defining layer is hydrophilic, and the Nth pixel defining layer is hydrophobic.

[0054] The hydrophilicity of the material used for the first pixel defining layer can make the contact angle between the first pixel defining layer and the ink of organic luminescent material be 0°-60°, wherein the contact angle of the first pixel defining layer and t...

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Abstract

A pixel bounding structure and a method for preparing the same are provided, OLED device, the pixel defining structure includes a substrate, pixel bounding film, The pixel bounding film includes at least two pixel bounding layers, the at least two pixel bounding layers being stacked on the substrate in a direction away from the substrate, the pixel bounding layer being hydrophilic at a bottom layer of the pixel bounding film, and the pixel bounding layer being hydrophobic at a top layer of the pixel bounding film. In the pixel bounding structure proposed by the present invention, A pixel bounding layer located at the bottom layer of the pixel bounding film has hydrophilicity, A pixel bounding layer located on top of the pixel bounding film is hydrophobic, so that the contact angle betweenthe bottom of the pixel bounding film and the ink of the organic luminescent material is small, and the contact angle between the top of the pixel bounding film and the ink of the organic luminescentmaterial is large, thereby forming an organic electroluminescent film with uniform film thickness, avoiding color mixing among pixels of different colors, and improving the performance of the OLED device.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescence diode display, in particular to a pixel defining structure, a preparation method thereof, and an OLED device. Background technique [0002] Organic Light Emitting Diode (OLED) has the characteristics of self-luminescence, bendability, wide viewing angle, long life, energy saving and environmental protection. The existing OLED types mainly include evaporation type and printing type. The cost of evaporation type OLED is relatively high, while the cost of printing type OLED is low and easy to be large-sized. Therefore, printing type OLED has attracted widespread attention in the industry. [0003] The key to the production of printed OLEDs is to accurately drop the organic light-emitting material ink into the pixel pits formed by the pixel defining layer, so as to obtain an organic electroluminescent film with uniform film thickness. In the production process of the existing prin...

Claims

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Application Information

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IPC IPC(8): H01L27/32H01L21/77
CPCH10K59/122H10K59/1201
Inventor 周凯锋
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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