Lossless Synchronous Absorption Circuit, Boost and Buck Switching Power Supply Circuit
A technology of absorbing circuit and absorbing capacitor, applied in electrical components, adjusting electric variables, instruments, etc., can solve problems such as common mode interference
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Embodiment 1
[0048] Please refer to Figure 11 , Embodiment 1 of the present invention provides a lossless synchronous snubber circuit, comprising a first diode Ds1 connected in series with a switching device Q1, a bus capacitor Cbus and a second diode Ds2, the cathode of the first diode Ds1 and A snubber capacitor Cs1 is connected between the common intersection of the bus capacitor Cbus and the common intersection of the anode of the second diode Ds2 and the bus capacitor Cbus, and the switching device is turned on or off by a pulse drive signal. That is, a loss synchronous snubber circuit composed of the first diode Ds1, the bus capacitor Cbus, the second diode Ds2 and the snubber capacitor Cs1 is connected to both ends of the switching device Q1.
[0049] Please refer to Figure 11 , the switching device Q1 may be a field effect transistor. The specific connection relationship is as follows: the drain of the switching device Q1 is connected to the anode of the first diode Ds1, the fi...
Embodiment 2
[0065] Embodiment 2 of the present invention is improved on the basis of Embodiment 1, and its area is that at least one of the first diode Ds1 and the second diode Ds2 in the charging circuit adopts a junction field effect Transistor, bipolar transistor, insulated gate bipolar transistor, metal oxide semiconductor field effect transistor or V-groove field effect transistor replacement, when replacing at least one diode in the charging circuit, said junction field effect transistor, bipolar The conduction direction of the polar transistor, the insulated gate bipolar transistor, the metal oxide semiconductor field effect transistor or the V-groove field effect transistor is the same as the current direction of the charging circuit.
[0066] Wherein, the insulated gate bipolar transistor or the metal oxide semiconductor field effect transistor may be integrated with a diode. When at least one diode in the charging circuit is replaced by an insulated gate bipolar transistor or a ...
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