Unlock instant, AI-driven research and patent intelligence for your innovation.

Optimization method for read performance of storage system based on charge-trapping 3d TLC flash memory

A storage system and charge capture technology, which is applied in the field of read performance optimization of storage systems, can solve problems such as long time consumption and large response delay, and achieve the effects of improving read performance, reducing read delay, and improving parallelism

Active Publication Date: 2020-07-24
HUAZHONG UNIV OF SCI & TECH
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in some dedicated storage systems that have high requirements on the response delay of read requests, there is a certain bottleneck in the optimization of read performance.
On the other hand, there are irregular garbage collection operations in flash memory-based storage systems. This operation takes a long time because it involves a large number of flash memory erasures and data migration. Blocking and large response delay

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optimization method for read performance of storage system based on charge-trapping 3d TLC flash memory
  • Optimization method for read performance of storage system based on charge-trapping 3d TLC flash memory
  • Optimization method for read performance of storage system based on charge-trapping 3d TLC flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0035] Before describing the technical solution of the present invention in detail, a brief introduction will be made to the relevant basic concepts in the flash memory chip. Such as figure 1 Shown is a schematic diagram of the structure of an existing NAND flash memory chip. The flash memory chip consists of five layers, from outside to inside: chip (chip)—wafer (die)—group (plane)—block (bloc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a read performance optimization method of a storage system based on a charge trapping type 3D TLC flash memory, wherein the method includes the steps of obtaining all physicalpages storing all or part of requested data for any read request issued by upper layer file system, obtaining a physical page set, and adding 1 to the the number of read times of each physical page inthe physical page set; for any physical page in the physical page collection, if it is a valid page and the reading times are greater than a preset reading times threshold value, and there is no middle page corresponding to the physical page, regarding the physical page as an original physical page, and an idle physical page is determined as a target page in the flash memory, and copying the datain the original physical page into the target page; marking the original physical page as a middle page and mark the target page as a valid page; ending the optimization processing for the current read request. The invention can improve the parallelism of the read operation, thereby improving the read performance of the whole storage system.

Description

technical field [0001] The invention belongs to the field of computer storage, and more specifically relates to a method for optimizing read performance of a storage system based on a charge-trapping 3D TLC flash memory. Background technique [0002] Compared with the traditional storage system based on 2D flash memory, the storage system based on Charge Trap (CT) 3D TLC flash memory has the advantages of high storage density and strong scalability, so it has been increasingly widely used. In the charge-trapping 3D TLC, there are three pages on a word line, the low page, the middle page, and the high page. When performing a write operation, the three pages on a word line are simultaneously written. When performing a read operation, the three pages Read separately. The study found that the speed of reading operations on different types of pages is different, specifically, the read latency of the low page and high page is significantly lower than that of the middle page. [...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
CPCG06F3/061G06F3/065G06F3/0652G06F3/0679
Inventor 吴非朱玥熊钦周游谢长生
Owner HUAZHONG UNIV OF SCI & TECH